scholarly journals Review of Single-Phase Magnetoelectric Multiferroic Thin Film and Process

Ceramist ◽  
2021 ◽  
Vol 24 (3) ◽  
pp. 295-313
Author(s):  
Hong Goo Yeo

Advance in the growth and characterization of multiferroic thin film promises new device application such as next generation memory, nanoelectronics and energy harvesting. In this review, we provide a brief overview of recent progress in the growth, characterization and understanding of thin-film multiferroics. Driven by the development of thin film growth techniques, the ability to produce high quality multiferroic thin films offers researchers access to new phase and understanding of these materials. We discuss that epitaxial strain and atomic-level engineering of chemistry determine the muliferroic thin film properties. We then discuss the new structures and properties of non-equilibrium phases which is stabilized by strain engineering.

Science ◽  
2008 ◽  
Vol 321 (5885) ◽  
pp. 108-111 ◽  
Author(s):  
G. Hlawacek ◽  
P. Puschnig ◽  
P. Frank ◽  
A. Winkler ◽  
C. Ambrosch-Draxl ◽  
...  

2002 ◽  
Vol 506 (3) ◽  
pp. 228-234 ◽  
Author(s):  
Y.D Kim ◽  
J Stultz ◽  
D.W Goodman

1989 ◽  
Vol 159 ◽  
Author(s):  
G. Haugstad ◽  
A. Raisanen ◽  
C. Caprile ◽  
X. Yu ◽  
A. Franciosi

ABSTRACTSynchrotron radiation photoemission was used to characterize Sm and Mn thin film nucleation and growth on solid Xe substrates, in the 3×1014 - 2×1016 atoms/cm2 coverage range. Film growth is well approximated by a model in which the nucleation site density remains constant and hemi-ellipsoidal particles increase in size until coalescence is achieved. Site density and average cluster size are determined from the coverage-dependence of metal and Xe photoemission intensities. Size estimates are confirmed by experimental fingerprints of coalescence.


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