Photoemission Characterization of Thin Film Nucleation on Inert Substrates

1989 ◽  
Vol 159 ◽  
Author(s):  
G. Haugstad ◽  
A. Raisanen ◽  
C. Caprile ◽  
X. Yu ◽  
A. Franciosi
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Nucleation Site ◽  
Coverage Dependence ◽  
Site Density ◽  
Ellipsoidal Particles ◽  
Film Nucleation ◽  
Synchrotron Radiation Photoemission ◽  
Average Cluster

ABSTRACTSynchrotron radiation photoemission was used to characterize Sm and Mn thin film nucleation and growth on solid Xe substrates, in the 3×1014 - 2×1016 atoms/cm2 coverage range. Film growth is well approximated by a model in which the nucleation site density remains constant and hemi-ellipsoidal particles increase in size until coalescence is achieved. Site density and average cluster size are determined from the coverage-dependence of metal and Xe photoemission intensities. Size estimates are confirmed by experimental fingerprints of coalescence.

Characterization of Step-Edge Barriers in Organic Thin-Film Growth

Science ◽  
2008 ◽  
Vol 321 (5885) ◽  
pp. 108-111 ◽  
Author(s):  
G. Hlawacek ◽  
P. Puschnig ◽  
P. Frank ◽  
A. Winkler ◽  
C. Ambrosch-Draxl ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Step Edge ◽  
Organic Thin Film

Island Formation of SiC Film on Striated Si(001) Substrates

2008 ◽  
Vol 600-603 ◽  
pp. 227-230 ◽  
Author(s):  
Yoshimine Kato ◽  
Kazuo Sakumoto
Keyword(s):  
Growth Rate ◽  
Film Growth ◽  
Nucleation Site ◽  
The Other ◽  
Film Growth Rate ◽  
Surface Nucleation ◽  
Site Density ◽  
Other Hand ◽  
Sic Film ◽  
Nucleation Site Density

SiC growth on as-received and striated Si(001) substrates was studied. SiC films were grown by pulsed-jet chemical vapor deposition using monomethylsilane as a gas source at 780°C. Two kinds of Si surfaces were prepared. One was an as-received Si(001) surface and the other was an striated (scratched) Si(001) surface. It was found that nucleation rate of SiC is quite different between these two kinds of surfaces. The film growth rate was very low for the as-received Si(001) surface compared with the striated surface, and after 8 hours of growth hardly any film was grown and only square-shaped islands were observed. On the other hand, for the undulant substrate about 100nm thick 3C-SiC film was grown after 8 hours of deposition. This film growth rate difference appears to be due to the difference in density of nucleation sites. For the as-received Si(001) surface, nucleation site density appears to be quite small due to the atomically flat surface. On the other hand, for the undulant surface, nucleation site density was large enough for the film to grow faster.

Thin Film Deposition and Growth Processes by Ionized Cluster Beams

1990 ◽  
Vol 206 ◽  
Author(s):  
I. Yamada ◽  
G.H. Takaoka ◽  
H. Usui ◽  
S.K. Koh
Keyword(s):  
Thin Film ◽  
Cluster Size ◽  
Molecular Beam ◽  
Film Growth ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Cluster Beam ◽  
Film Nucleation ◽  
Cluster Beams

ABSTRACTAtomic scale imaging by STM and TEM of the initial stages of film growth of Ag and Au on graphite substrates indicate that the film nucleation processes are markedly different for ionized cluster beam (ICB) and molecular beam (MBE) deposition. Recent results on measurements of cluster size and formation of epitaxial metal-semiconductor layers by ICB are also discussed.

Characterization of MgO(100) thin film growth on Mo(100)

2002 ◽  
Vol 506 (3) ◽  
pp. 228-234 ◽  
Author(s):  
Y.D Kim ◽  
J Stultz ◽  
D.W Goodman
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth
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