scholarly journals The Systematic Errors of Geosynchronous Satellite Data

1993 ◽  
Vol 4 (3) ◽  
pp. 331
Author(s):  
ho Lin ◽  
Po-Hsieng Lin
1985 ◽  
Vol 113 (5) ◽  
pp. 769-781 ◽  
Author(s):  
Robert F. Adler ◽  
Michael J. Markus ◽  
Douglas D. Fenn

Space Weather ◽  
2015 ◽  
Vol 13 (5) ◽  
pp. 254-256 ◽  
Author(s):  
Rob J. Redmon ◽  
Juan V. Rodriguez ◽  
Janet C. Green ◽  
Dan Ober ◽  
Gordon Wilson ◽  
...  

1978 ◽  
Vol 48 ◽  
pp. 7-29
Author(s):  
T. E. Lutz

This review paper deals with the use of statistical methods to evaluate systematic and random errors associated with trigonometric parallaxes. First, systematic errors which arise when using trigonometric parallaxes to calibrate luminosity systems are discussed. Next, determination of the external errors of parallax measurement are reviewed. Observatory corrections are discussed. Schilt’s point, that as the causes of these systematic differences between observatories are not known the computed corrections can not be applied appropriately, is emphasized. However, modern parallax work is sufficiently accurate that it is necessary to determine observatory corrections if full use is to be made of the potential precision of the data. To this end, it is suggested that a prior experimental design is required. Past experience has shown that accidental overlap of observing programs will not suffice to determine observatory corrections which are meaningful.


1988 ◽  
Vol 102 ◽  
pp. 215
Author(s):  
R.M. More ◽  
G.B. Zimmerman ◽  
Z. Zinamon

Autoionization and dielectronic attachment are usually omitted from rate equations for the non–LTE average–atom model, causing systematic errors in predicted ionization states and electronic populations for atoms in hot dense plasmas produced by laser irradiation of solid targets. We formulate a method by which dielectronic recombination can be included in average–atom calculations without conflict with the principle of detailed balance. The essential new feature in this extended average atom model is a treatment of strong correlations of electron populations induced by the dielectronic attachment process.


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