Disagreement between measurements of the neutron lifetime by the ultracold neutron storage method and the beam technique

2018 ◽  
Vol 189 (06) ◽  
pp. 635-641
Author(s):  
Anatolii P. Serebrov
2019 ◽  
Vol 219 ◽  
pp. 03002 ◽  
Author(s):  
Shannon F. Hoogerheide ◽  
Jimmy Caylor ◽  
Evan R. Adamek ◽  
Eamon S. Anderson ◽  
Ripan Biswas ◽  
...  

A precise value of the neutron lifetime is important in several areas of physics, including determinations of the quark-mixing matrix element |Vud|, related tests of the Standard Model, and predictions of light element abundances in Big Bang Nucleosynthesis models. We report the progress on a new measurement of the neutron lifetime utilizing the cold neutron beam technique. Several experimental improvements in both neutron and proton counting that have been developed over the last decade are presented. This new effort should yield a final uncertainty on the lifetime of 1 s with an improved understanding of the systematic effects.


Author(s):  
В.Ф. Ежов ◽  
В.Л. Рябов ◽  
А.З. Андреев ◽  
Б.А. Базаров ◽  
А.Г. Глушков ◽  
...  

AbstractA design of a magnetic shutter for a trap made of permanent magnets for the ultracold neutron storage in experiments on measuring the neutron lifetime is proposed. The data of shutter testing and comparison with the calculated magnetic fields are reported.


2016 ◽  
Vol 61 (4) ◽  
pp. 609-617 ◽  
Author(s):  
V. A. Andreev ◽  
A. V. Vasiljev ◽  
E. A. Ivanov ◽  
D. S. Ilyin ◽  
A. G. Krivshich ◽  
...  

Author(s):  
W. L. Bell

Disappearance voltages for second order reflections can be determined experimentally in a variety of ways. The more subjective methods, such as Kikuchi line disappearance and bend contour imaging, involve comparing a series of diffraction patterns or micrographs taken at intervals throughout the disappearance range and selecting that voltage which gives the strongest disappearance effect. The estimated accuracies of these methods are both to within 10 kV, or about 2-4%, of the true disappearance voltage, which is quite sufficient for using these voltages in further calculations. However, it is the necessity of determining this information by comparisons of exposed plates rather than while operating the microscope that detracts from the immediate usefulness of these methods if there is reason to perform experiments at an unknown disappearance voltage.The convergent beam technique for determining the disappearance voltage has been found to be a highly objective method when it is applicable, i.e. when reasonable crystal perfection exists and an area of uniform thickness can be found. The criterion for determining this voltage is that the central maximum disappear from the rocking curve for the second order spot.


Author(s):  
C. B. Carter ◽  
J. Rose ◽  
D. G. Ast

The hot-pressing technique which has been successfully used to manufacture twist boundaries in silicon has now been used to form tilt boundaries in this material. In the present study, weak-beam imaging, lattice-fringe imaging and electron diffraction techniques have been combined to identify different features of the interface structure. The weak-beam technique gives an overall picture of the geometry of the boundary and in particular allows steps in the plane of the boundary which are normal to the dislocation lines to be identified. It also allows pockets of amorphous SiO2 remaining in the interface to be recognized. The lattice-fringe imaging technique allows the boundary plane parallel to the dislocation to be identified. Finally the electron diffraction technique allows the periodic structure of the boundary to be evaluated over a large area - this is particularly valuable when the dislocations are closely spaced - and can also provide information on the structural width of the interface.


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