Oxide Mediated Epitaxial Growth of CoSi2 in a Single Deposition Step

1999 ◽  
Vol 564 ◽  
Author(s):  
S. Ohmi ◽  
R. T. Tung
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Diffusion Barrier ◽  
Blocking Layer ◽  
Deposition Step

AbstractA number of modifications of the oxide-mediated epitaxy (OME) technique are presented which have enabled the growth of thick (∼25–40nm) epitaxial CoSi2 layers in a single deposition sequence. The uses of (a) a thin Ti cap, (b) a thin Ti blocking layer, (c) the codeposition of Co-rich CoSix, and (d) the co-deposition of Col−xTix. have all been shown to lead to improved epitaxial quality over the pure Co OME process, for Co thickness greater than 6nm. Essentially uniform, single crystal silicide layers of over 25nm have been grown in a single deposition step. These results are supportive of the proposed role of a diffusion barrier/kinetics retarder on the part of the interlayer in the OME and the Ti-interlayer mediated epitaxy processes.

Growth of Epitaxial CoSi2 Through a Thin Interlayer

1996 ◽  
Vol 427 ◽  
Author(s):  
R. T. Tung
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Thin Layer ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Elevated Temperatures ◽  
Time Process ◽  
Thin Interlayer ◽  
Technological Interest

AbstractThe phenomenon of Ti-interlayer mediated epitaxy (TIME) of CoSi2 on Si(100) has attracted much academic and technological interest. As yet, the role of the interlayer, Ti, is not fully understood. The various drawbacks of the TIME process have driven the search for a better interlayer. New results are presented which demonstrate the efficacy of a thin SiOx layer, grown in a peroxide-containing aqueous solution, in inducing nearly perfect epitaxial growth of CoSi2 on practically all surfaces of Si. This technique, dubbed oxide mediated epitaxy (OME), allows a thin layer of epitaxial CoSi2 to grow sub-surface, leaving the SiOx layer largely on the surface of the silicide. An interesting result of the surface oxide cap is a significant re-evaporation of cobalt observed during deposition at elevated temperatures. Thicker (10-30nm), excellent quality, CoSi2 single crystal thin films have been grown by repeated growth sequences on Si(100), (110), (211) and (511). Nearly perfect type A oriented CoSi2 layers were grown on Si(111) using mixed A/B oriented template layers.

AlCoCrNiMo high-entropy alloy as diffusion barrier between NiAlHf coating and Ni-based single crystal superalloy

2021 ◽  
Vol 414 ◽  
pp. 127101 ◽  
Author(s):  
Zhongzhan Xu ◽  
Peng Zhang ◽  
Wei Wang ◽  
Qian Shi ◽  
Hongzhi Yang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Diffusion Barrier ◽  
Single Crystal Superalloy ◽  
High Entropy Alloy ◽  
High Entropy

scholarly journals Modeling of magneto-conductivity of bismuth selenide: a topological insulator

2021 ◽  
Vol 3 (4) ◽  
Author(s):  
Yogesh Kumar ◽  
Rabia Sultana ◽  
Prince Sharma ◽  
V. P. S. Awana
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Single Crystal ◽  
Single Crystals ◽  
X Ray Diffraction ◽  
Field Range ◽  
X Ray ◽  
Bulk Carriers ◽  
Different Temperatures

AbstractWe report the magneto-conductivity analysis of Bi2Se3 single crystal at different temperatures in a magnetic field range of ± 14 T. The single crystals are grown by the self-flux method and characterized through X-ray diffraction, Scanning Electron Microscopy, and Raman Spectroscopy. The single crystals show magnetoresistance (MR%) of around 380% at a magnetic field of 14 T and a temperature of 5 K. The Hikami–Larkin–Nagaoka (HLN) equation has been used to fit the magneto-conductivity (MC) data. However, the HLN fitted curve deviates at higher magnetic fields above 1 T, suggesting that the role of surface-driven conductivity suppresses with an increasing magnetic field. This article proposes a speculative model comprising of surface-driven HLN and added quantum diffusive and bulk carriers-driven classical terms. The model successfully explains the MC of the Bi2Se3 single crystal at various temperatures (5–200 K) and applied magnetic fields (up to 14 T).

MOCVD epitaxial growth of single crystal GaN, AlN and AlxGa1-xN

1985 ◽  
Vol 14 (5) ◽  
pp. 633-644 ◽  
Author(s):  
M. Matloubian ◽  
M. Gershenzon
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth

scholarly journals Epitaxial Growth of Co Thin Films on SrTiO3 Single-Crystal Substrates

2010 ◽  
Vol 34 (2) ◽  
pp. 78-91 ◽  
Author(s):  
O. Yabuhara ◽  
Y. Nukaga ◽  
M. Ohtake ◽  
F. Kirino ◽  
M. Futamoto
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Growth

A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 271-276 ◽  
Author(s):  
Robert E. Stahlbush ◽  
Rachael L. Myers-Ward ◽  
Brenda L. VanMil ◽  
D. Kurt Gaskill ◽  
Charles R. Eddy
Keyword(s):  
Epitaxial Growth ◽  
Basal Plane ◽  
Reduction Process ◽  
Epitaxial Layers ◽  
In Situ Growth ◽  
Half Loop ◽  
Insight Into

The recently developed technique of UVPL imaging has been used to track the path of basal plane dislocations (BPDs) in SiC epitaxial layers. The glide of BPDs during epitaxial growth has been observed and the role of this glide in forming half-loop arrays has been examined. The ability to track the path of BPDs through the epitaxy has made it possible to develop a BPD reduction process for epitaxy grown on 8° offcut wafers, which uses an in situ growth interrupt and has achieved a BPD reduction of > 98%. The images also provide insight into the strong BPD reduction that typically occurs in epitaxy grown on 4° offcut wafers.

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