scholarly journals Improved Dielectric Properties and Grain Boundary Effect of Phenanthrene Under High Pressure

2021 ◽  
Vol 9 ◽  
Author(s):  
Xiaofeng Wang ◽  
Qinglin Wang ◽  
Tianru Qin ◽  
Guozhao Zhang ◽  
Haiwa Zhang ◽  
...  

In situ impedance measurements, Raman measurements and theoretical calculations were performed to investigate the electrical transport and vibrational properties of polycrystalline phenanthrene. Two phase transitions were observed in the Raman spectra at 2.3 and 5.9 GPa, while phenanthrene transformed into an amorphous phase above 12.1 GPa. Three discontinuous changes in bulk and grain boundary resistance and relaxation frequency with pressure were attributed to the structural phase transitions. Grain boundaries were found to play a dominant role in the carrier transport process of phenanthrene. The dielectric performance of phenanthrene was effectively improved by pressure. A significant mismatch between Z″ and M″ peaks was observed, which was attributed to the localized electronic conduction in phenanthrene. Theoretical calculations showed that the intramolecular interactions were enhanced under compression. This study offers new insight into the electrical properties as well as grain boundary effect in organic semiconductors at high pressure.

2010 ◽  
Vol 97 (17) ◽  
pp. 174101 ◽  
Author(s):  
Ming Li ◽  
Jie Yang ◽  
Karim Snoussi ◽  
Lixin Li ◽  
Huixin Wang ◽  
...  

2015 ◽  
Vol 106 (13) ◽  
pp. 132902 ◽  
Author(s):  
Qinglin Wang ◽  
Cailong Liu ◽  
Yang Gao ◽  
Yanzhang Ma ◽  
Yonghao Han ◽  
...  

Author(s):  
Linfei Yang ◽  
Jianjun Jiang ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Meiling Hong ◽  
...  

The vibrational, electrical and structural properties of Ga2S3 were explored by Raman spectroscopy, EC measurements, HRTEM and First-principles theoretical calculations under different pressure environments up to 36.4 GPa.


1999 ◽  
Vol 14 (1) ◽  
pp. 120-123 ◽  
Author(s):  
D. J. Wang ◽  
J. Qiu ◽  
Y. C. Guo ◽  
Z. L. Gui ◽  
L. T. Li

Yttrium-doped (Sr0.45Pb0.55)TiO3 ceramics have been studied by complex impedance analysis. As a sort of NTC-PTC composite thermistor, it exhibited a significantly large negative temperature coefficient of resistivity below Tc in addition to the ordinary PTC characteristics above Tc. It is found that the NTC effect in NTC-PTC materials was not originated from the deep energy level of donor (bulk behavior), but from the electrical behavior of the grain boundary. Therefore, the NTC-PTC composite effect was assumed to be a grain boundary effect, and yttrium was a donor at shallow energy level. The NTC-PTC ceramics were grain boundary controlled materials.


1988 ◽  
Vol 37 (14) ◽  
pp. 8499-8501 ◽  
Author(s):  
G. Parthasarathy ◽  
W. B. Holzapfel

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