scholarly journals Effects of a Reduced Effective Active Region Volume on Wavelength-Dependent Efficiency Droop of InGaN-Based Light-Emitting Diodes

2018 ◽  
Vol 8 (11) ◽  
pp. 2138 ◽  
Author(s):  
Panpan Li ◽  
Yongbing Zhao ◽  
Xiaoyan Yi ◽  
Hongjian Li

In this study, wavelength-dependent efficiency droop phenomena in InGaN-based light-emitting diodes (LEDs) by a reduced effective active region volume were investigated. Different effective active region volumes can be extracted from theoretical fitting to the efficiency-versus-current curves of standard high efficiency InGaN near-ultraviolet, blue, and green LEDs. It has been found that the effective volume of the active region reduces more significantly with increasing emission wavelength, resulting in a lower onset-droop current density, as well as a more severe droop. Increasing the quantum well (QW) thickness to reduce carrier density is proposed as an effective way to alleviate the efficiency droop.

2019 ◽  
Vol 9 (15) ◽  
pp. 3004
Author(s):  
Yongbing Zhao ◽  
Panpan Li

We demonstrate an ultra-low efficiency droop in c-plane polar InGaN blue light-emitting diodes (LEDs) by reducing the carrier density using a wide InGaN last quantum well (LQW). It is found that the LEDs with a 5.2 nm thick LQW show a negligible efficiency droop, with an external quantum efficiency (EQE) reducing from a peak value of 38.8% to 36.4% at 100 A/cm2 and the onset-droop current density is raised from 3 A/cm2 to 40 A/cm2 as the LQW thickness increases from 3.0 nm to 5.2 nm. The analysis based on the ABC model indicates that small efficiency droop is caused by the reduced carrier density using a wide LQW. The peak efficiency is reduced with a wide LQW, which is caused by the reduction of the electron-hole wavefunction overlap and the deterioration of the crystal quality of the InGaN layer. This study suggests that the application of the InGaN LEDs with a wide LQW can be a promising and simple remedy for achieving high efficiency at a high current density.


2000 ◽  
Author(s):  
Xia Guo ◽  
Guangdi Shen ◽  
Guohong Wang ◽  
Jinyu Du ◽  
WeiLing Guo ◽  
...  

2010 ◽  
Vol 43 (35) ◽  
pp. 354004 ◽  
Author(s):  
Sang-Heon Han ◽  
Dong-Yul Lee ◽  
Hyun-Wook Shim ◽  
Gwon-Chul Kim ◽  
Young Sun Kim ◽  
...  

2010 ◽  
Vol 54 (10) ◽  
pp. 1119-1124 ◽  
Author(s):  
Hongping Zhao ◽  
Guangyu Liu ◽  
Ronald A. Arif ◽  
Nelson Tansu

2012 ◽  
Vol 5 (6) ◽  
pp. 062103 ◽  
Author(s):  
Chih-Chien Pan ◽  
Shinichi Tanaka ◽  
Feng Wu ◽  
Yuji Zhao ◽  
James S. Speck ◽  
...  

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