scholarly journals Accurate Electron Drift Mobility Measurements in Moderately Dense Helium Gas at Several Temperatures

Atoms ◽  
2021 ◽  
Vol 9 (3) ◽  
pp. 52
Author(s):  
Armando Francesco Borghesani

We report new accurate measurements of the drift mobility μ of quasifree electrons in moderately dense helium gas in the temperature range 26K≤T≤300K for densities lower than those at which states of electrons localized in bubbles appear. By heuristically including multiple-scattering effects into classical kinetic formulas, as previously done for neon and argon, an excellent description of the field E, density N, and temperature T dependence of μ is obtained. Moreover, the experimental evidence suggests that the strong decrease of the zero-field density-normalized mobility μ0N with increasing N from the low up to intermediate density regime is mainly due to weak localization of electrons caused by the intrinsic disorder of the system, whereas the further decrease of μ0N for even larger N is due to electron self-trapping in cavities. We suggest that a distinction between weakly localized and electron bubble states can be done by inspecting the behavior of μ0N as a function of N at intermediate densities.

1986 ◽  
Vol 47 (C8) ◽  
pp. C8-589-C8-592
Author(s):  
N. BINSTED ◽  
S. L. COOK ◽  
J. EVANS ◽  
R. J. PRICE ◽  
G. N. GREAVES

1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.


1972 ◽  
Vol 10 (2) ◽  
pp. 177-188 ◽  
Author(s):  
E. Fuschini ◽  
F. Malaguti ◽  
C. Maroni ◽  
I. Massa ◽  
A. Uguzzoni ◽  
...  

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