scholarly journals Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 150 ◽  
Author(s):  
Lorenzo Pace ◽  
Sergio Colangeli ◽  
Walter Ciccognani ◽  
Patrick Ettore Longhi ◽  
Ernesto Limiti ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Gate Length ◽  
Small Signal ◽  
Linear Measurements ◽  
Ka Band ◽  
Noise Amplifier ◽  
Gan On Si ◽  
Noise Models

In this paper a GaN-on-Si MMIC Low-Noise Amplifier (LNA) working in the Ka-band is shown. The chosen technology for the design is a 100 nm gate length HEMT provided by OMMIC foundry. Both small-signal and noise models had been previously extracted by the means of an extensive measurement campaign, and were then employed in the design of the presented LNA. The amplifier presents an average noise figure of 2.4 dB, a 30 dB average gain value, and input/output matching higher than 10 dB in the whole 34–37.5 Ghz design band, while non-linear measurements testify a minimum output 1 dB compression point of 23 dBm in the specific 35–36.5 GHz target band. This shows the suitability of the chosen technology for low-noise applications.

DC Power-Optimized Ka-Band GaN-on-Si Low-Noise Amplifier With 1.5 dB Noise Figure

2022 ◽  
pp. 1-4
Author(s):  
L. Pace ◽  
P. E. Longhi ◽  
W. Ciccognani ◽  
S. Colangeli ◽  
F. Vitulli ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ka Band ◽  
Dc Power ◽  
Noise Amplifier ◽  
Gan On Si

scholarly journals Design of Ka-band broadband low-noise amplifier using 100nm gate-length GaN on silicon technology

2021 ◽  
Vol 1983 (1) ◽  
pp. 012080
Author(s):  
Yu Zou ◽  
Zhijian Chen ◽  
Junkai Lai ◽  
Bin Li ◽  
Zhaohui Wu ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Gate Length ◽  
Ka Band ◽  
Silicon Technology ◽  
Noise Amplifier

A MMIC Low-Noise Amplifier realized with two different gate length GaN-on-Si technologies

2021 ◽  
Author(s):  
Lorenzo Pace ◽  
Patrick Ettore Longhi ◽  
Walter Ciccognani ◽  
Sergio Colangeli ◽  
Remy Leblanc ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Gate Length ◽  
Noise Amplifier ◽  
Gan On Si

scholarly journals Design and Implementation of Low Noise Amplifier At 60ghz using Current Mirror Feedback

2019 ◽  
Vol 8 (9S3) ◽  
pp. 249-254
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Single Stage ◽  
Common Source ◽  
Small Signal ◽  
Total Size ◽  
Noise Amplifier

This discourse used 45nm CMOS technology to design a Low noise amplifier for a Noise figure < 2dB and gain greater than 13dB at the 60GHz unlicensed band of frequency. A single stage, primary cascode LNA is modeled and its small signal model is analyzed. Common source structure is hired in the driver stage to escalate the output power with single stage contours. To enhance small signal gain, simple active transistor feedback and cascode feedback configurations are designed and appended to the basic LNA. In addition to this, current re-use inductor is designed and added to the cascode amplifier which is deliberated to give low power and low noise figure. Small signal analysis of simple active transistor feedback and current re-use inductor has been presented. The measurement results indicated that the input match and the output gain at 60GHz achieves -8dB and 13dB respectively with the supply voltage of 900mV. The frequency response obtained is a narrow band response with 6GHz of bandwidth. The circuit is simulated by Cadence Virtuoso tool. The layout of the related circuit is drawn by means of the Virtuoso Layout editor with total size of 0.1699μm2.

Ka-band 0.18 μm CMOS low noise amplifier with 5.2 dB noise figure

2007 ◽  
Vol 49 (5) ◽  
pp. 1187-1189 ◽  
Author(s):  
Win-Ming Chang ◽  
Zi-Hao Hsiung ◽  
Christina F. Jou
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ka Band ◽  
Noise Amplifier

scholarly journals Broadband GaAs pHemt LNA design for T/R module application

2016 ◽  
Vol 54 (5) ◽  
pp. 584
Author(s):  
Phong Dai Le ◽  
Vu Duy Thong ◽  
Pham Le Binh
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Small Signal Gain ◽  
Small Signal ◽  
Third Order ◽  
Wide Bandwidth ◽  
Fully Integrated ◽  
Three Stages ◽  
Noise Amplifier

In this paper, a three stages monolithic low noise amplifier (LNA) for T/R module application is presented. This LNA is fully integrated on 0.15-um pHEMT GaAs technology and achieves a wide bandwidth from 6 GHz to 11 GHz. Within this band, the LNA has the minimum of 1.3 dB noise figure and over 25 dB small signal gain. The output third order interception point (OIP3) is over 30 dBm and the 1 dB compression point (P1 dB) is 16 dBm at the output.

Measurement of a 270 GHz Low Noise Amplifier With 7.5 dB Noise Figure

2007 ◽  
Vol 17 (7) ◽  
pp. 546-548 ◽  
Author(s):  
T. Gaier ◽  
L. Samoska ◽  
A. Fung ◽  
W. R. Deal ◽  
V. Radisic ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier
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