scholarly journals Broadband GaAs pHemt LNA design for T/R module application

2016 ◽  
Vol 54 (5) ◽  
pp. 584
Author(s):  
Phong Dai Le ◽  
Vu Duy Thong ◽  
Pham Le Binh
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Small Signal Gain ◽  
Small Signal ◽  
Third Order ◽  
Wide Bandwidth ◽  
Fully Integrated ◽  
Three Stages ◽  
Noise Amplifier

In this paper, a three stages monolithic low noise amplifier (LNA) for T/R module application is presented. This LNA is fully integrated on 0.15-um pHEMT GaAs technology and achieves a wide bandwidth from 6 GHz to 11 GHz. Within this band, the LNA has the minimum of 1.3 dB noise figure and over 25 dB small signal gain. The output third order interception point (OIP3) is over 30 dBm and the 1 dB compression point (P1 dB) is 16 dBm at the output.

scholarly journals Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 150 ◽  
Author(s):  
Lorenzo Pace ◽  
Sergio Colangeli ◽  
Walter Ciccognani ◽  
Patrick Ettore Longhi ◽  
Ernesto Limiti ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Gate Length ◽  
Small Signal ◽  
Linear Measurements ◽  
Ka Band ◽  
Noise Amplifier ◽  
Gan On Si ◽  
Noise Models

In this paper a GaN-on-Si MMIC Low-Noise Amplifier (LNA) working in the Ka-band is shown. The chosen technology for the design is a 100 nm gate length HEMT provided by OMMIC foundry. Both small-signal and noise models had been previously extracted by the means of an extensive measurement campaign, and were then employed in the design of the presented LNA. The amplifier presents an average noise figure of 2.4 dB, a 30 dB average gain value, and input/output matching higher than 10 dB in the whole 34–37.5 Ghz design band, while non-linear measurements testify a minimum output 1 dB compression point of 23 dBm in the specific 35–36.5 GHz target band. This shows the suitability of the chosen technology for low-noise applications.

scholarly journals A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid Circuit

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
R. Malmqvist ◽  
C. Samuelsson ◽  
A. Gustafsson ◽  
P. Rantakari ◽  
S. Reyaz ◽  
...  
Keyword(s):  
Rf Mems ◽  
Noise Figure ◽  
Low Noise ◽  
Small Signal Gain ◽  
Small Signal ◽  
Mems Switch ◽  
Noise Amplifier ◽  
Hybrid Circuit ◽  
24 Ghz ◽  
K Band

A K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6–1.3 dB higher NF together with similar values ofP1 dBat 18–25 GHz. The gain of one LNA circuit path is reduced by 25–30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption.

scholarly journals Design of the Low Noise Amplifier Circuit in Band L for Improve the Gain and Circuit Stability

2018 ◽  
Vol 1 (4) ◽  
Author(s):  
Arash Omidi ◽  
Rohalah Karami ◽  
Parisa Sadat Emadi ◽  
Hamed Moradi
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
System Stability ◽  
Third Order ◽  
Cmos Transistor ◽  
Cmos Lna ◽  
Noise Amplifier ◽  
The Cost ◽  
Intercept Point

In this paper, focuses on the design of Low Noise Amplifier circuitry in the frequency band L. This circuit is designed using the 0.18 nm CMOS transistor technology, which consists of two transistor Stage. The purpose of this research is to improve the cost of: Increase Gain - Increase circuit linearization - Create an integrative matching network for system stability. The application of this circuit can be used in wireless and GPS systems. The CMOS LNA exhibits a gain greater than 23 dB from 1.1 to 2.0 GHz, and a noise figure of 2.7 to 3.3 dB from 1.2 to 2.4 GHz. At 1.575 GHz, the 1-dB compression point (P1dB) is 1.73 dBm, with an input third-order intercept point (IIP3) of -3.98 dBm. This circuit is designed using ADS software.

A Fully Integrated 5.2-GHz CMOS Variable Gain LNA for 802.11a WLAN

2012 ◽  
Vol 433-440 ◽  
pp. 5579-5583
Author(s):  
Ji Hai Duan ◽  
Chun Lei Kang
Keyword(s):  
Power Supply ◽  
Return Loss ◽  
Noise Figure ◽  
High Gain ◽  
Low Noise ◽  
Cmos Process ◽  
Small Signal ◽  
Fully Integrated ◽  
Variable Gain ◽  
Noise Amplifier

A fully integrated 5.2GHz variable gain low noise amplifier (VGLNA) in a 0.18μm CMOS process is proposed in this paper. The VGLAN can achieve a maximum small signal gain of 17.85 dB within the noise figure (NF) of 2.04 dB and a minimum gain of 2.04 dB with good input return loss. The LNA’s P1dB in the high gain mode is -17.5 dBm. The LAN consumes only 14.58 mW from a 1.8V power supply.

An ESD Protected Wideband CMOS Low Noise Amplifier Employing Active Feedback Technique

2011 ◽  
Vol 403-408 ◽  
pp. 2809-2813
Author(s):  
Kuan Bao ◽  
Xiang Ning Fan
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Cmos Process ◽  
Fully Integrated ◽  
Input Matching ◽  
Active Feedback ◽  
Cmos Lna ◽  
Noise Amplifier ◽  
On Chip

This paper presents a wideband low noise amplifier (LNA) for multi-standard radio applications. The low noise characteristic and input matching are simultaneously achieved by active-feedback technique. Bond-wire inductors and electrostatic devices (ESDs) are co-designed to improve the chip performance. Implemented in 0.18-μm CMOS process, the core size of the fully integrated LNA circuits is 535 μm×425 μm without any passive on-chip inductor. The simulated gain and the minimal noise figure of the CMOS LNA are 17.5 dB and 2.0 dB, respectively. The LNA achieves a -3dB bandwidth of 3.1 GHz. And the simulated IIP3 is -4.4 dBm at 2.5 GHz. Operating at 1.8V, the LNA draws a current of 7.7 mA.

scholarly journals Design and Implementation of Low Noise Amplifier At 60ghz using Current Mirror Feedback

2019 ◽  
Vol 8 (9S3) ◽  
pp. 249-254
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Single Stage ◽  
Common Source ◽  
Small Signal ◽  
Total Size ◽  
Noise Amplifier

This discourse used 45nm CMOS technology to design a Low noise amplifier for a Noise figure < 2dB and gain greater than 13dB at the 60GHz unlicensed band of frequency. A single stage, primary cascode LNA is modeled and its small signal model is analyzed. Common source structure is hired in the driver stage to escalate the output power with single stage contours. To enhance small signal gain, simple active transistor feedback and cascode feedback configurations are designed and appended to the basic LNA. In addition to this, current re-use inductor is designed and added to the cascode amplifier which is deliberated to give low power and low noise figure. Small signal analysis of simple active transistor feedback and current re-use inductor has been presented. The measurement results indicated that the input match and the output gain at 60GHz achieves -8dB and 13dB respectively with the supply voltage of 900mV. The frequency response obtained is a narrow band response with 6GHz of bandwidth. The circuit is simulated by Cadence Virtuoso tool. The layout of the related circuit is drawn by means of the Virtuoso Layout editor with total size of 0.1699μm2.

scholarly journals Low Noise Amplifier using Darlington Pair At 90nm Technology

2018 ◽  
Vol 8 (4) ◽  
pp. 2054
Author(s):  
Rashmi Singh ◽  
Rajesh Mehra
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Phase Mismatch ◽  
Low Noise Amplifier ◽  
Single Stage ◽  
Cmos Process ◽  
Trade Off ◽  
Satellite Applications ◽  
Three Stages ◽  
Noise Amplifier

<p class="Abstract"><span>The demand of low noise amplifier (LNA) has been rising in today’s communication system. LNA is the basic building circuit of the receiver section satellite. The design concept demonstrates the design trade off with NF, gain, power consumption. This paper reports on with analysis of wideband LNA. This paper shows the schematic of LNA by using Darlington pair amplifier. This LNA has been fabricated on 90nm CMOS process. This paper is focused on to make comparison of three stage and single stage LNA. Here, the phase mismatch between these patameters is quantitavely analyzed to study the effect on gain and noise figure (NF). In this paper, single stage LNA has shown the 23 dB measured gain, while the three stages LNA has demonstrated 29 dB measured gain. Here, LNA designed using darlington pair shows low NF of 3.3-4.8 dB, which comparable to other reported single stage LNA designs and appreciably low compared to the three stages LNA. Hence, findings from this paper suggest the use of single stage LNA designed using Darlington pair in transceiver satellite applications.</span></p>

scholarly journals LNA Prototype at 54 MHz to 88 MHz Using Discrete Components

2020 ◽  
Vol 4 (1) ◽  
pp. 32
Author(s):  
Prapto Nugroho ◽  
Ivan Muhammad Ihsan Izetbegovic ◽  
Wahyu Dewanto
Keyword(s):  
Power Consumption ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Area Network ◽  
Third Order ◽  
Regional Area ◽  
Technical Specifications ◽  
Noise Amplifier ◽  
Intercept Point

This paper presents a design and prototyping of a Low-Noise Amplifier (LNA) for Wireless Regional Area Network (WRAN) operating in TV broadcast bands between 54 MHz – 88 MHz. The LNA design was then implemented by using discrete components. Components values was obtained by utilized DC analysis according to specifications which follows the Institute of Electrical and Electronics Engineering (IEEE) 802.22 standard on WRAN technical specifications. Simulation with 88 MHz produced S11 = -5.72 dB, S12 = -41.57 dB, S21 = 15.07 dB, S22 = -4.76 dB, Noise Figure (NF) = 3.9 dB, Input Third Order Intercept Point (IIP3) = 2.21 dBm, and power consumption of 45.39 mW. Experiments results on 88 MHz showed S11 = -6.13 dB and S21 = 0.74 dB.

scholarly journals Design of CMOS Tunable Image-Rejection Low-Noise Amplifier with Active Inductor

VLSI Design ◽  
2008 ◽  
Vol 2008 ◽  
pp. 1-6 ◽  
Author(s):  
Ler Chun Lee ◽  
Abu Khari bin A'ain ◽  
Albert Victor Kordesch
Keyword(s):  
Noise Figure ◽  
Notch Filter ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Active Inductor ◽  
Cmos Process ◽  
Image Rejection ◽  
Fully Integrated ◽  
Active Inductors ◽  
Noise Amplifier

A fully integrated CMOS tunable image-rejection low-noise amplifier (IRLNA) has been designed using Silterra's industry standard 0.18 μm RF CMOS process. The notch filter is designed using an active inductor. Measurement results show that the notch filter designed using active inductor contributes additional 1.19 dB to the noise figure of the low-noise amplifier (LNA). A better result is possible if the active inductor is optimized. Since active inductors require less die area, the die area occupied by the IRLNA is not significantly different from a conventional LNA, which was designed for comparison. The proposed IRLNA exhibits S21 of 11.8 dB, S11 of −17.8 dB, S22 of −10.7 dB, and input 1 dB compression point of −12 dBm at 3 GHz

Measurement of a 270 GHz Low Noise Amplifier With 7.5 dB Noise Figure

2007 ◽  
Vol 17 (7) ◽  
pp. 546-548 ◽  
Author(s):  
T. Gaier ◽  
L. Samoska ◽  
A. Fung ◽  
W. R. Deal ◽  
V. Radisic ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier
Sign in / Sign up

Export Citation Format

Share Document