scholarly journals Fluorolytic Sol–Gel Synthesis of Nanometal Fluorides: Accessing New Materials for Optical Applications

Inorganics ◽  
2018 ◽  
Vol 6 (4) ◽  
pp. 128 ◽  
Author(s):  
Kerstin Scheurell ◽  
Erhard Kemnitz

The potential of fluorolytic sol–gel synthesis for a wide variety of applications in the field of optical materials is reviewed. Based on the fluorolytic sol–gel synthesis of nanometal fluorides, sols of complex fluorometalates have become available that exhibit superior optical properties over known classical binary metal fluorides as, for instance, magnesium fluoride, calcium fluoride, or strontium fluoride, respectively. The synthesis of transparent sols of magnesium fluoroaluminates of the general composition MgxAlFy, and fluoroperovskites, [K1−xNax]MgF3, is reported. Antireflective coatings fabricated from MgF2, CaF2, MgxAlFy, and [K1−xNax]MgF3 sols and their relevant properties are comprehensively described. Especially the heavier alkaline earth metal fluorides and the fluorperovskites crystallizing in a cubic crystal structure are excellent hosts for rare earth (RE) metals. Thus, the second chapter reflects the synthesis approach and the properties of luminescent systems based on RE-doped alkaline earth metal fluorides and [K1−xNax]MgF3 phases.

Gels ◽  
2021 ◽  
Vol 8 (1) ◽  
pp. 20
Author(s):  
Ke-Jing Lee ◽  
Yeong-Her Wang

Zr can be stabilized by the element selected, such as Mg-stabilized Zr (MSZ), thus providing MSZ thin films with potentially wide applications and outstanding properties. This work employed the element from alkaline earth metal stabilized Zr to investigate the electrical properties of sol–gel AZrOx (A = alkaline earth metal; Mg, Sr, Ba) as dielectric layer in metal-insulator–metal resistive random-access memory devices. In addition, the Hume–Rothery rule was used to calculate the different atomic radii of elements. The results show that the hydrolyzed particles, surface roughness, and density of oxygen vacancy decreased with decreased difference in atomic radius between Zr and alkaline earth metal. The MgZrOx (MZO) thin film has fewer particles, smoother surface, and less density of oxygen vacancy than the SrZrOx (SZO) and BaZrOx (BZO) thin films, leading to the lower high resistance state (HRS) current and higher ON/OFF ratio. Thus, a suitable element selection for the sol–gel AZrOx memory devices is helpful for reducing the HRS current and improving the ON/OFF ratio. These results were obtained possibly because Mg has a similar atomic radius as Zr and the MgOx-stabilized ZrOx.


2010 ◽  
Vol 19 (12) ◽  
pp. 1179-1183
Author(s):  
Shu-Hui Cai ◽  
Ztang Chen ◽  
Xin Lu ◽  
Zw-Wei Chen ◽  
Hui-Lin Wan

2012 ◽  
Vol 27 (19) ◽  
pp. 2535-2539 ◽  
Author(s):  
Kai Dong ◽  
Junjie Liao ◽  
Siguo Xiao ◽  
Xiaoliang Yang ◽  
Jian Wen Ding

Abstract


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