The Fractal Geometry of TiAlNiAu Thin Film Metal System and Its Sheet Resistance (Lateral Size Effect)

This paper investigates the relation between the geometry of metric space of a TiAlNiAu thin film metal system and the geometry of normed functional space of its sheet resistances (functionals), which are elements of the functional space. The investigation provides a means to describe a lateral size effect that involves a dependency in local approximation of sheet resistance Rsq of TiAlNiAu metal film on its lateral linear dimensions (in (x,y) plane). This dependency is defined by fractal geometry of dendrites, or, more specifically, it is a power-law dependency on fractal dimension Df value. The revealed relation has not only fundamental but also a great practical importance both for a precise calculation of thin film metal system Rsq values in designing discreet devices and ICs, and for controlling results at micro- and nanoscale in producing workflow for thin metal films and systems based on them.

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Слоевое сопротивление TiAlNiAu тонкопленочной металлизации омических контактов к нитридным полупроводниковым структурам

Физика и техника полупроводников ◽

10.21883/ftp.2019.01.46983.8886 ◽

2019 ◽

Vol 53 (1) ◽

pp. 32

Author(s):

Н.А. Торхов

Keyword(s):

Thin Film ◽

Integrated Circuits ◽

Fractal Geometry ◽

Practical Importance ◽

Functional Space ◽

Local Approximation ◽

Power Dependence ◽

Metallic Films ◽

Metallic System ◽

Accurate Calculation

AbstractThe relation between the geometry of the metric space of the thin-film TiAlNiAu metallic system surface and the geometry of the functional space of the sheet resistances R _ sq of this system is established. Based on the results obtained, the lateral size effect observed in the local approximation is described, which manifests itself in the dependence of the sheet resistance R _ sq of a TiAlNiAu metallic film on its lateral (in the ( x , y ) plane) linear sizes. The dependence of the R _ sq value on the linear sizes is shown to be determined by the fractal geometry of the forming dendrites, specifically, by the power dependence of a variation in the linear sizes on the fractal dimension D _ f . The obtained regularity is of great practical importance for accurate calculation of the R _ sq values of thin-film metal systems in designing discrete devices and integrated circuits and for controlling the technological processes of fabricating thin metallic films and systems based on them at the micrometer and nanometer scales.

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Low Temperature Silicides for Poly-Silicon Thin Film Transistor Applications

MRS Proceedings ◽

10.1557/proc-402-191 ◽

1995 ◽

Vol 402 ◽

Cited By ~ 5

Author(s):

G. T. Sarcona ◽

M. K. Hatalis

Keyword(s):

Thin Film ◽

Sheet Resistance ◽

Thin Film Transistor ◽

Surface Preparation ◽

Silicon Thin Film ◽

Active Matrix ◽

Cobalt Nickel ◽

Silicon Materials ◽

Cobalt Silicides ◽

Matrix Liquid

AbstractThin films of cobalt, nickel, and tungsten were sputtered on three types of silicon materials to explore their potential for use as silicides in thin film transistor technologies for active matrix liquid crystal displays. The metals were sputtered onto single-crystal, polycrystalline, and amorphous silicon. The metals were annealed in vacuum after deposition over temperatures ranging from 250°C to 750°C. The sheet resistance of the resulting silicide films was measured using a four point probe apparatus. Cobalt silicides with sheet resistance of less than 4 Ω/ were formed at 600°C. Nickel produced films with sheet resistance below 10 Ω/▪ at 350°C, though the surface was required to be vacuum-clean. In this study, tungsten did not produce silicides. Surface preparation has been found to be an important factor in tungsten and nickel silicidation.

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Investigation of sheet resistance in thin-film mixed-conducting solid oxide fuel cell cathode test cells

Journal of Power Sources ◽

10.1016/j.jpowsour.2010.03.017 ◽

2010 ◽

Vol 195 (16) ◽

pp. 5155-5166 ◽

Cited By ~ 20

Author(s):

Matthew E. Lynch ◽

Meilin Liu

Keyword(s):

Thin Film ◽

Fuel Cell ◽

Solid Oxide Fuel Cell ◽

Sheet Resistance ◽

Solid Oxide ◽

Oxide Fuel ◽

Fuel Cell Cathode ◽

Test Cells ◽

Cell Cathode

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Calculation of the TCO sheet resistance in thin film modules using electroluminescence imaging

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc.2016.7749874 ◽

2016 ◽

Author(s):

Yael Augarten ◽

Andrew Wrigley ◽

Uwe Rau ◽

Bart E. Pieters

Keyword(s):

Thin Film ◽

Sheet Resistance

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Study on the effect of growth-time and seed-layers of Zinc Oxide nanostructured thin film prepared by the hydrothermal method for liquefied petroleum gas sensor application

BIBECHANA ◽

10.3126/bibechana.v16i0.21557 ◽

2018 ◽

Vol 16 ◽

pp. 145-153

Author(s):

Guna Nidha Gnawali ◽

Shankar P Shrestha ◽

Khem N Poudyal ◽

Indra B Karki ◽

Ishwar Koirala

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Gas Sensor ◽

Sheet Resistance ◽

Measurement Unit ◽

Growth Time ◽

Zno Nanostructures ◽

Liquefied Petroleum Gas ◽

Nanostructured Thin Film ◽

Seed Layers

Gas sensors are devices that can convert the concentration of an analytic gas into an electronic signal. Zinc oxide (ZnO) is an important n-type metal oxide semiconductor which has been utilized as gas sensor for several decades. In this work, ZnO nanostructured films were synthesized by a hydrothermal route from ZnO seeds and used as a liquefied petroleum gas (LPG) sensor. At first ZnO seed layers were deposited on glass substrates by using spin coating method, then ZnO nanostructured were grown on these substrates by using hydrothermal growth method for different time duration. The effect of growth time and seed layers of ZnO nanostructured on its structural, optical, and electrical properties was studied. These nanostructures were characterized by X-ray diffraction, scanning electron microscopy, optical spectroscopy, and four probes sheet resistance measurement unit. The sensing performances of the synthetic ZnO nanostructures were investigated for LPG.XRD showed that all the ZnO nanostructures were hexagonal crystal structure with preferential orientation. SEM reviled that the size of nanostructure increased with increase in growth time. Band gap and sheet resistance for ZnO nanostructured thin film decreased with increase in growth time. ZnO nanostructured thin film showed high sensitivity towards LPG gas. The sensitivity of the film is observed to increase with increase in no of seed layers as well as growth time. The dependence of the LPG sensing properties on the different growth time of ZnO nanostructured was investigated. The sensing performances of the film were investigated by measured change in sheet resistance under expose to LPG gas. BIBECHANA 16 (2019) 145-153

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Size Effects in Ruthenium-Based Thick-Film Resistors: Rutile vs. Pyrochlore-Based Resistors

Active and Passive Electronic Components ◽

10.1155/1991/94210 ◽

1991 ◽

Vol 14 (3) ◽

pp. 163-173 ◽

Cited By ~ 5

Author(s):

M. Prudenziati ◽

F. Sirotti ◽

M. Sacchi ◽

B. Morten ◽

A. Tombesi ◽

...

Keyword(s):

Size Effect ◽

Thick Film ◽

Sheet Resistance ◽

Firing Temperature ◽

Size Effects ◽

Conductive Phase ◽

Lower Sheet ◽

Lower Sheet Resistance

The size effect, namely the change of sheet resistance, Rsas a function of resistor length, has been investigated in layers whose conductive phase evolves from Pb-rich (Ru-deficient pyrochlores) to Pb2Ru2O6.5and finally to RuO2by increasing the firing temperature. It is found that Bi diffusion from the terminations is responsible for lower sheet resistance values in shorter resistors whatever the conductive phase is. On the contrary, Ag diffusion is responsible for lower sheet resistance values in shorter resistors only in the case of ruthenate conductive grains while the reverse is observed in RuO2-based layers. Size effect can be suppressed with Pt/Au-based terminations provided that no Bi is contained and with Au-metallorganic-based contact provided that the peak firing temperature is not too high.

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