The Optical Properties of Dy3+ Doped LaPO4 Phosphors Prepared by Solid State Reaction Method

Luminescent nanomaterials are used in everyday life due to their employment in distinct fields of science and technology, like cathode ray tubes (CRTs), flat panel display devices, temperature sensors, lasers, solar-cells, biological imaging, and solid-state lighting but also as carriers for miscellaneous therapeutic drugs. We have prepared dysprosium Dy3+ (0.5 mol %) doped lanthanum phosphate (LaPO4) phosphor by solid state reaction method. The excitation spectra of synthesized phosphor at 595 nm monitoring were composed of broadband and a series of sharp peaks, the strongest excitation peak at 254, 271, and 350 nm. The main emission spectra of samples under 254, 271, and 350 nm excitation are Dy3+ (0.5 mol %) doped LaPO4 phosphor observed at 477 and 573 nm corresponding to blue and yellow color. The broadband emission is the characteristic of the allowed f-h transition of Dy3+ ions. The corresponding emission band is observed due to the (blue emission) 4f9/2→6h15/2, (yellow emission) 4f9/2→6h13/2 transition of Dy3+ ions. All the samples have been characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and photoluminescence (PL) techniques.

Effects of Microwave and Furnace Annealing for P-Type SnO Thin Film Material in Oxygen Ambient

Transparent conductive oxide (TCO) semiconductors are attracted considerable attention due to a wide range of applications, such as flat panel display (FPD), touch panels, solar cells, and other optoelectronic devices. Owing to the different carrier conduction paths between n-type and P-type TCOs, the n-type TCO used in TFTs usually have high Ion/Ioff current ratio (>107) and high electron mobility (>10 cm2/V·s), P-type TCO TFTs are both lower than that of n-type one. For complementary circuits design and applications, however, both P-type and n-type semiconductor materials are equally important. For SnO thin films, it is important to adjust the ratio of Sn2+ (SnO P-type) and Sn4+ (SnO2 n-type) in order to modulate the electrical characteristics. In this investigation of post treatment for SnO thin films, both microwave annealing (MWA) and furnace annealing process with 02 ambient are studied. The results show that SnO thin films are optimized at 300 °C, 30 minutes furnace annealing, the P-type SnO/SnO2 thin film shows surface mean roughness 0.168 nm, [Sn2+]/[Sn4+] ratio as 0.838, at least 80% transmittance between 380 nm-700 nm visible light. Withthe results, SnO can be even used to fabricate high performance P-type thin film transistors (TFTs) device for future applications.

A 1.2 V, 8-bit, 100 MHz pipelined analog-to-digital converter

A 1.2 V, 8 bit, 100 MSample/Sec Pipeline Analog-to-Digital Converter is designed in 0.18-μm standard CMOS technology. An emphasis was placed on observing the low voltage and low power design. The architecture of this ADC is 1 bit/stage pipelined configuration. With above specifications the designed ADC can be applicable for DVI flat-panel display; Giga bit Ethernet on copper, RGB to LCD converter and cable modem. This designed ADC can achieve SNDR 56dB in 100 MHz sampling frequency with 8 bit resolution. Total power dissipation is 40.6mW and INL is around 1 LSB and the maximum swing of the input is 1 Volt peak to peak which is almost rail-to-rail situation. The core area of the ADC excluding pads is around 0.25mm 2 .

A 1.2 V, 8-bit, 100 MHz pipelined analog-to-digital converter

A 1.2 V, 8 bit, 100 MSample/Sec Pipeline Analog-to-Digital Converter is designed in 0.18-μm standard CMOS technology. An emphasis was placed on observing the low voltage and low power design. The architecture of this ADC is 1 bit/stage pipelined configuration. With above specifications the designed ADC can be applicable for DVI flat-panel display; Giga bit Ethernet on copper, RGB to LCD converter and cable modem. This designed ADC can achieve SNDR 56dB in 100 MHz sampling frequency with 8 bit resolution. Total power dissipation is 40.6mW and INL is around 1 LSB and the maximum swing of the input is 1 Volt peak to peak which is almost rail-to-rail situation. The core area of the ADC excluding pads is around 0.25mm 2 .

Imaging Goa’s B2B sales dilemma: provoke or justify

Learning outcomes Appreciate changing contours of business to business (B2B) purchase and how sellers should adapt their selling style and promotions. Case overview/synopsis In the past two decades, imaging Goa (IG) and Azim Shaikh had weathered many business crises. However, as the COVID 19 pandemic unfolded, he became aware of critical fault lines in his B2B selling model. IG offered customised digital display solutions, but its primary source of revenue was B2B selling of interactive flat panel display (IFPD) devices. It, respectively, controlled about 35% and 3% of the market share of IFPD sales, respectively, in Goa and western India. IG’s success in the B2B segment was because of Shaikh’s ability to build strong relationships and customised solutions in an emerging market context. To deal with the COVID pandemic, the Indian Government had imposed a country-wide lockdown, which forced organisations to adopt work from home. This, in turn, created a pull for IFPDs. Yet, very soon Shaikh realised, in the new normal, there was a growing mismatch between his selling efforts and outcomes. Though overall revenue had not fallen much, but the veteran seller had started doubting his tried and tested relational solution selling model. Case dilemma involves the selection of appropriate selling approaches e.g. solution, insight or tiebreaker selling for different situations. This case also offers an opportunity to discuss, how to use online channels to complement B2B selling. Complexity Academic Level This teaching case study is suitable for the graduate-level programme in marketing management. Supplementary materials Teaching Notes are available for educators only. Subject code CSS 8: Marketing