Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor

2020 ◽  
Vol 59 (11) ◽  
pp. 115503
Author(s):  
Ryo Yokogawa ◽  
Hiroto Kobayashi ◽  
Yohichiroh Numasawa ◽  
Atsushi Ogura ◽  
Shin-ichi Nishizawa ◽  
...  
Keyword(s):  
High Temperature ◽  
Carrier Lifetime ◽  
Bipolar Transistor ◽  
Floating Zone ◽  
Insulated Gate Bipolar Transistor ◽  
High Temperature Process

Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes

2019 ◽  
Vol 58 (SB) ◽  
pp. SBBD07
Author(s):  
Hiroto Kobayashi ◽  
Ryo Yokogawa ◽  
Kosuke Kinoshita ◽  
Yohichiroh Numasawa ◽  
Atsushi Ogura ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Bipolar Transistor ◽  
Floating Zone ◽  
Insulated Gate Bipolar Transistor

Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode

2012 ◽  
Vol 33 (12) ◽  
pp. 1684-1686 ◽  
Author(s):  
Huaping Jiang ◽  
Jin Wei ◽  
Bo Zhang ◽  
Wanjun Chen ◽  
Ming Qiao ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor ◽  
Band To Band Tunneling ◽  
Tunneling Injection

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

2015 ◽  
Vol 36 (6) ◽  
pp. 591-593 ◽  
Author(s):  
Hao Feng ◽  
Wentao Yang ◽  
Yuichi Onozawa ◽  
Takashi Yoshimura ◽  
Akira Tamenori ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor
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