scholarly journals High-frequency short-pulse generation with a highly stacked InAs quantum dot mode-locked laser diode

2021 ◽  
Vol 60 (SB) ◽  
pp. SBBH02
Author(s):  
Kouichi Akahane ◽  
Atsushi Matsumoto ◽  
Toshimasa Umezawa ◽  
Naokatsu Yamamoto
2005 ◽  
Vol 22 (8) ◽  
pp. 1920-1922 ◽  
Author(s):  
Fang Xiao-Hui ◽  
Chen Jin-Hua ◽  
Wang Dong-Ning ◽  
Jin Wei ◽  
Tong Fu-Wua

2021 ◽  
Author(s):  
Nuran Dogru ◽  
Hilal S. Duranoglu Tunc ◽  
Ali Mumtaz Al-Dabbagh

2008 ◽  
Vol 1076 ◽  
Author(s):  
Matthew Lumb ◽  
Edmund Clarke ◽  
Dominic Farrell ◽  
Michael Damzen ◽  
Ray Murray

ABSTRACTWe have designed and grown a series of quantum dot semiconductor saturable absorber mirrors (QD-SESAMs) for a range of operating wavelengths, incorporating innovative design and processing features to optimise the device performance. Using a range of reflectivity studies, ellipsometric measurements and both time-integrated and time-resolved spectroscopic studies, we have conducted detailed investigations of device performance. Extensive modelling work of dielectric multilayers has been undertaken which supports our experimental findings and allows us to understand and design novel structures in order to improve and tailor device characteristics, including dielectric capping and non-normal incidence. We demonstrate samples designed for operation with the higher excited-states of the QDs which produced a self-starting train of mode-locked pulses with a temporal duration of 200 ps at a repetition rate of 78 MHz in a Nd:YVO4 solid-state laser. We also present SESAMs incorporating electronically coupled QD bilayers, allowing long wavelength operation.


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