Impact of Potential Fluctuation on Temperature Dependence of Optical Gain Characteristics in InGaN Quantum-Well Laser Diodes

2021 ◽  
Author(s):  
Itsuki Oshima ◽  
Yuma Ikeda ◽  
Shigeta Sakai ◽  
Atsushi A YAMAGUCHI ◽  
Susumu Kusanagi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
Laser Diodes ◽  
Optical Gain ◽  
Potential Fluctuation ◽  
Quantum Well Laser

Inhomogeneously broadened optical gain spectra of InGaN quantum well laser diodes

2008 ◽  
Vol 5 (6) ◽  
pp. 2126-2128 ◽  
Author(s):  
Kazunobu Kojima ◽  
Mitsuru Funato ◽  
Yoichi Kawakami ◽  
Harald Braun ◽  
Ulrich Schwarz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Optical Gain ◽  
Quantum Well Laser ◽  
Gain Spectra

Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes

1996 ◽  
Vol 80 (1) ◽  
pp. 582-584 ◽  
Author(s):  
Alexander Schönfelder ◽  
John D. Ralston ◽  
Konrad Czotscher ◽  
Stefan Weisser ◽  
Josef Rosenzweig ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Optical Gain ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

Enhancement of optical gain by controlling waveguide modes in semipolar InGaN quantum well laser diodes

2017 ◽  
Vol 254 (8) ◽  
pp. 1600746
Author(s):  
Shigeta Sakai ◽  
Keigo Matsuura ◽  
Atsushi A. Yamaguchi
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Optical Gain ◽  
Quantum Well Laser ◽  
Waveguide Modes

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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