Dependence of dose rate on the sensitivity of the resist under ultra-high flux extreme ultraviolet (EUV) pulse irradiation

Author(s):  
Kazumasa Okamoto ◽  
Shunpei Kawai ◽  
Yuta Ikari ◽  
Shigeo Hori ◽  
Akihiro Konda ◽  
...  
Author(s):  
Yi Wu ◽  
Eric Cunningham ◽  
Jie Li ◽  
Huaping Zang ◽  
Michael Chini ◽  
...  

2013 ◽  
Vol 102 (20) ◽  
pp. 201104 ◽  
Author(s):  
Y. Wu ◽  
E. Cunningham ◽  
H. Zang ◽  
J. Li ◽  
M. Chini ◽  
...  

1999 ◽  
Vol 581 ◽  
Author(s):  
N. Kishimoto ◽  
C.G. Lee ◽  
N. Umeda ◽  
Y. Takeda ◽  
V.T. Gritsyna

ABSTRACTApplication of negative heavy ions, alleviating surface charging on insulators, enables us to conduct low-energy and high-flux implantation, and leads to a well-defined tool to fabricate near-surface nanostructures. Negative Cu ions of 60 keV, at high doses, have generated nanocrystals in amorphous(a-)SiO2 with a size (∼10 nm) suitable for nonlinear optical devices. The kinetic processes, inside the solid and at the surface, are studied by cross-sectional TEM and tapping AFM, respectively. In a-SiO2, nanoparticles spontaneously grow with dose rate, being controlled by the surface tension and radiation-induced diffusion. Furthermore, the nanospheres give rise to a two-dimensional (2D) arrangement around a given dose rate. The 2D-distribution occurs in coincidence with enhanced sputtering where a considerable Cu fraction sublimates from the surface. The dose-rate dependence of nanoparticles indicates that the surface-sputtering process influences the intra-solid process and contributes to the 2D-distribution. A self-assembling mechanism for 2D-arrangement of nanospheres is discussed taking into account contribution of the surface sputtering.


2008 ◽  
Vol 104 (2) ◽  
pp. 023105 ◽  
Author(s):  
Lap Van Dao ◽  
Sven Teichmann ◽  
Jeff Davis ◽  
Peter Hannaford

2011 ◽  
Vol 98 ◽  
pp. S11
Author(s):  
V. Favaudon ◽  
F. Pouzoulet ◽  
J.J. Fontaine ◽  
L. Caplier ◽  
M. Sayarath ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document