scholarly journals White Noise Characterization of N-MOSFETs for Physics-Based Cryogenic Device Modeling

2021 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa
Keyword(s):  
White Noise ◽  
Variable Temperature ◽  
Low Frequency ◽  
Low Noise ◽  
Broadband Noise ◽  
Noise Amplifier ◽  
Cryogenic Chamber ◽  
Noise Characterization ◽  
First Time

<p>We propose a methodology of variable-temperature broadband noise characterization for cryogenic MOSFETs. A DUT is mounted on a reusable PCB <i>vehicle</i> with a built-in low-noise amplifier, and loaded into a cryogenic chamber. Using the vehicle, we measured flicker (low frequency) and white noise, and have successfully revealed dominance of shot noise in the temperature range from 300 to 120 K for the first time.</p>

scholarly journals White Noise Characterization of N-MOSFETs for Physics-Based Cryogenic Device Modeling

2021 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa
Keyword(s):  
White Noise ◽  
Variable Temperature ◽  
Low Frequency ◽  
Low Noise ◽  
Broadband Noise ◽  
Noise Amplifier ◽  
Cryogenic Chamber ◽  
Noise Characterization ◽  
First Time

<p>We propose a methodology of variable-temperature broadband noise characterization for cryogenic MOSFETs. A DUT is mounted on a reusable PCB <i>vehicle</i> with a built-in low-noise amplifier, and loaded into a cryogenic chamber. Using the vehicle, we measured flicker (low frequency) and white noise, and have successfully revealed dominance of shot noise in the temperature range from 300 to 120 K for the first time.</p>

scholarly journals Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

2021 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa
Keyword(s):  
Shot Noise ◽  
Printed Circuit Board ◽  
Noise Figure ◽  
Variable Temperature ◽  
Low Noise ◽  
Broadband Noise ◽  
Circuit Board ◽  
Low Frequencies ◽  
Cryogenic Chamber

Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded into a cryogenic chamber. The vehicle allows noise measurement in the frequency range from 50 kHz to 100 MHz. At low frequencies, it enables extraction of activation energies associated with electron trapping sites. At high frequencies, as has been suggested by noise figure measurements, the white noise of MOSFETs is shown to be dominated by the shot noise, which has much weaker temperature dependence than the thermal noise. The shot noise will be a problematic noise source in broadband RF CMOS circuits operating at cryogenic temperatures.<div><br></div>

scholarly journals Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

2021 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa
Keyword(s):  
Shot Noise ◽  
Printed Circuit Board ◽  
Noise Figure ◽  
Variable Temperature ◽  
Low Noise ◽  
Broadband Noise ◽  
Circuit Board ◽  
Low Frequencies ◽  
Cryogenic Chamber

Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded into a cryogenic chamber. The vehicle allows noise measurement in the frequency range from 50 kHz to 100 MHz. At low frequencies, it enables extraction of activation energies associated with electron trapping sites. At high frequencies, as has been suggested by noise figure measurements, the white noise of MOSFETs is shown to be dominated by the shot noise, which has much weaker temperature dependence than the thermal noise. The shot noise will a problematic noise source in broadband RF CMOS circuits operating at cryogenic temperatures.<div><br></div>

scholarly journals Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

2021 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa
Keyword(s):  
Shot Noise ◽  
Printed Circuit Board ◽  
Noise Figure ◽  
Variable Temperature ◽  
Low Noise ◽  
Broadband Noise ◽  
Circuit Board ◽  
Low Frequencies ◽  
Cryogenic Chamber

Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded into a cryogenic chamber. The vehicle allows noise measurement in the frequency range from 50 kHz to 100 MHz. At low frequencies, it enables extraction of activation energies associated with electron trapping sites. At high frequencies, as has been suggested by noise figure measurements, the white noise of MOSFETs is shown to be dominated by the shot noise, which has much weaker temperature dependence than the thermal noise. The shot noise will a problematic noise source in broadband RF CMOS circuits operating at cryogenic temperatures.<div><br></div>

Using low-frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction

2004 ◽  
Author(s):  
Jean-Guy Tartarin ◽  
Geoffroy Soubercaze-Pun ◽  
Abdelali Rennane ◽  
Laurent Bary ◽  
Robert Plana ◽  
...  
Keyword(s):  
Technology Assessment ◽  
Low Frequency ◽  
Failure Prediction ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gan Hemt ◽  
Noise Characterization

Characterization of Low Noise Amplifier (LNA) for mm-Wave Wireless Systems

2019 ◽  
pp. 351-356
Author(s):  
Mohd Fadzil bin Ain ◽  
Mohamad Faiz bin Mohamed Omar ◽  
Roslina bt. Hussin ◽  
Zainal Arifin bin Ahmad ◽  
Intan Sorfina Zainal Abidin ◽  
...  
Keyword(s):  
Wireless Systems ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier
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