scholarly journals Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

2021 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa
Keyword(s):  
Shot Noise ◽  
Printed Circuit Board ◽  
Noise Figure ◽  
Variable Temperature ◽  
Low Noise ◽  
Broadband Noise ◽  
Circuit Board ◽  
Low Frequencies ◽  
Cryogenic Chamber

Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded into a cryogenic chamber. The vehicle allows noise measurement in the frequency range from 50 kHz to 100 MHz. At low frequencies, it enables extraction of activation energies associated with electron trapping sites. At high frequencies, as has been suggested by noise figure measurements, the white noise of MOSFETs is shown to be dominated by the shot noise, which has much weaker temperature dependence than the thermal noise. The shot noise will be a problematic noise source in broadband RF CMOS circuits operating at cryogenic temperatures.<div><br></div>

scholarly journals Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

2021 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa
Keyword(s):  
Shot Noise ◽  
Printed Circuit Board ◽  
Noise Figure ◽  
Variable Temperature ◽  
Low Noise ◽  
Broadband Noise ◽  
Circuit Board ◽  
Low Frequencies ◽  
Cryogenic Chamber

Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded into a cryogenic chamber. The vehicle allows noise measurement in the frequency range from 50 kHz to 100 MHz. At low frequencies, it enables extraction of activation energies associated with electron trapping sites. At high frequencies, as has been suggested by noise figure measurements, the white noise of MOSFETs is shown to be dominated by the shot noise, which has much weaker temperature dependence than the thermal noise. The shot noise will a problematic noise source in broadband RF CMOS circuits operating at cryogenic temperatures.<div><br></div>

scholarly journals Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

2021 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa
Keyword(s):  
Shot Noise ◽  
Printed Circuit Board ◽  
Noise Figure ◽  
Variable Temperature ◽  
Low Noise ◽  
Broadband Noise ◽  
Circuit Board ◽  
Low Frequencies ◽  
Cryogenic Chamber

Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded into a cryogenic chamber. The vehicle allows noise measurement in the frequency range from 50 kHz to 100 MHz. At low frequencies, it enables extraction of activation energies associated with electron trapping sites. At high frequencies, as has been suggested by noise figure measurements, the white noise of MOSFETs is shown to be dominated by the shot noise, which has much weaker temperature dependence than the thermal noise. The shot noise will a problematic noise source in broadband RF CMOS circuits operating at cryogenic temperatures.<div><br></div>

scholarly journals White Noise Characterization of N-MOSFETs for Physics-Based Cryogenic Device Modeling

2021 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa
Keyword(s):  
White Noise ◽  
Variable Temperature ◽  
Low Frequency ◽  
Low Noise ◽  
Broadband Noise ◽  
Noise Amplifier ◽  
Cryogenic Chamber ◽  
Noise Characterization ◽  
First Time

<p>We propose a methodology of variable-temperature broadband noise characterization for cryogenic MOSFETs. A DUT is mounted on a reusable PCB <i>vehicle</i> with a built-in low-noise amplifier, and loaded into a cryogenic chamber. Using the vehicle, we measured flicker (low frequency) and white noise, and have successfully revealed dominance of shot noise in the temperature range from 300 to 120 K for the first time.</p>

scholarly journals White Noise Characterization of N-MOSFETs for Physics-Based Cryogenic Device Modeling

2021 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa
Keyword(s):  
White Noise ◽  
Variable Temperature ◽  
Low Frequency ◽  
Low Noise ◽  
Broadband Noise ◽  
Noise Amplifier ◽  
Cryogenic Chamber ◽  
Noise Characterization ◽  
First Time

<p>We propose a methodology of variable-temperature broadband noise characterization for cryogenic MOSFETs. A DUT is mounted on a reusable PCB <i>vehicle</i> with a built-in low-noise amplifier, and loaded into a cryogenic chamber. Using the vehicle, we measured flicker (low frequency) and white noise, and have successfully revealed dominance of shot noise in the temperature range from 300 to 120 K for the first time.</p>

scholarly journals A compact low-noise frontend for interleaved Rx/Tx arrays at K-/Ka-Band

2021 ◽  
pp. 1-7
Author(s):  
Anton Sieganschin ◽  
Thomas Jaschke ◽  
Arne F. Jacob
Keyword(s):  
Insertion Loss ◽  
Printed Circuit Board ◽  
Noise Figure ◽  
Low Noise ◽  
Single Band ◽  
Circuit Board ◽  
Dual Band ◽  
Ka Band ◽  
Compression Properties ◽  
The Individual

Abstract This contribution deals with a frontend for interleaved receive (Rx)-/transmit (Tx)-integrated phased arrays at K-/Ka-band. The circuit is realized in printed circuit board technology and feeds dual-band Rx/Tx- and single-band Tx-antenna elements. The dual-band element feed is composed of a substrate-integrated waveguide (SIW) diplexer with low insertion loss, a low-noise amplifier (LNA), a bandpass filter, and several passive transitions. The compression properties of the LNA are identified through two-tone measurements. The results dictate the maximum allowable output power of the power amplifier. The single band feed consists of a SIW with several transitions. Simulation and measurement results of the individual components are presented. The frontend is assembled and measured. It exhibits an Rx noise figure of 2 dB, a Tx insertion loss of ~ 2.9 dB, and an Rx/Tx-isolation of 70 dB. The setup represents the unit cell of a full array and thus complies with the required half-wave spacing at both Rx and Tx.

Low noise amplifier for radio astronomy

2013 ◽  
Vol 5 (4) ◽  
pp. 453-461 ◽  
Author(s):  
David M.P. Smith ◽  
Laurens Bakker ◽  
Roel H. Witvers ◽  
Bert E.M. Woestenburg ◽  
Keith D. Palmer
Keyword(s):  
Printed Circuit Board ◽  
Noise Figure ◽  
Ground Plane ◽  
Noise Temperature ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Circuit Board ◽  
Manufacturing Techniques ◽  
Noise Amplifier ◽  
Better Than

A compact, microstrip, two-stage, room temperature, single-ended low noise amplifier (LNA) is designed using commercial components for Aperture Tile in Focus (APERTIF), a square kilometre array (SKA) pathfinder project. Various techniques are investigated to insert inductance between the source pad of the package and the ground plane of the printed circuit board (PCB), with the chosen design able to do this using standard manufacturing techniques. The desired noise temperature of 25 K (noise figure (NF) of 0.36 dB) is met over the 1.0–1.8 GHz band, with an input return loss better than 10 dB.

scholarly journals Op-amp based low noise amplifier for magnetic particle spectroscopy

2017 ◽  
Vol 3 (2) ◽  
pp. 599-602
Author(s):  
Ankit Malhotra ◽  
Thorsten Buzug
Keyword(s):  
Magnetic Particle ◽  
Printed Circuit Board ◽  
Noise Figure ◽  
Superparamagnetic Iron Oxide ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Circuit Board ◽  
Input Noise ◽  
Op Amps ◽  
Noise Amplifier

AbstractMagnetic particle spectrometry (MPS) is a novel technique used to measure the magnetization response of superparamagnetic iron oxide nanoparticles (SPIONs). Therefore, it is one of the most important tools for the characterization of the SPIONs for imaging modalities such as magnetic particle imaging (MPI) and Magnetic Resonance Imaging (MRI). In MPS, change in the particle magnetization induces a voltage in a dedicated receive coil. The amplitude of the signal can be very low (ranging from a few nV to 100 μV) depending upon the concentration of the nanoparticles. Hence, the received signal needs to be amplified with a low noise amplifier (LNA). LNA’s paramount task is to amplify the received signal while keeping the noise induced by its own circuitry minimum. In the current research, we purpose modeling, design, and development of a prototyped LNA for MPS. The designed prototype LNA is based on the parallelization technique of Op-amps. The prototyped LNA consists of 16 Op-amps in parallel and is manufactured on a printed circuit board (PCB), with a size of 110.38 mm × 59.46 mm and 234 components. The input noise of the amplifier is approx. 546 pV/√Hz with a noise figure (NF) of approx. 1.4 dB with a receive coil termination. Furthermore, a comparison between the prototyped LNA and a commercially available amplifier is shown.

scholarly journals A Summing Configuration based Low Noise Amplifier for MPI and MPS

2018 ◽  
Vol 4 (1) ◽  
pp. 83-86 ◽  
Author(s):  
Ankit Malhotra ◽  
Thorsten M. Buzug
Keyword(s):  
Magnetic Particle ◽  
Printed Circuit Board ◽  
Noise Figure ◽  
Imaging Modality ◽  
Superparamagnetic Iron Oxide ◽  
Input Voltage ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Circuit Board ◽  
Noise Amplifier

AbstractMagnetic particle imaging (MPI) is a novel tomographic imaging modality which uses static and dynamic magnetic fields to measure the magnetic response generated by superparamagnetic iron oxide nanoparticles (SPIONs). For the characterization of the SPIONs magnetic particle spectroscopy (MPS) is used. In the current research, a low noise amplifier (LNA) suitable for MPI and MPS is presented. LNA plays a significant role in the receive chain of MPI and MPS by amplifying the signals from the nanoparticles while keeping the noise induced through its own circuitry minimal. The LNA is based on the summing configuration and fabricated on a printed circuit board (PCB). Moreover, the prototyped LNA is compared with a commercially available pre-amplifier. The input voltage noise of the prototyped LNA with a receiving coil of series resistance of 0.551 mΩ and an inductance of 130 μH is 561 pV/√Hz with a noise figure (NF) of 11.57 dB.

scholarly journals Design and Fabrication of a 1.5GHz Microwave Low Noise Amplifier with Suitable Low-noise and High Gain Characteristics

2017 ◽  
Vol 2 (8) ◽  
pp. 7
Author(s):  
Cherechi Ndukwe ◽  
Oliver Ozioko ◽  
Okere A U
Keyword(s):  
Communication Systems ◽  
Printed Circuit Board ◽  
Noise Figure ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Circuit Board ◽  
Source Impedance ◽  
Wide Range ◽  
Noise Amplifier

This paper presents the design, simulation and fabrication of a low noise amplifier with high gain of 1.5GHz. In communication systems, there is always difficulty in distinguishing the received signal from noise at very low signal powers. A low noise amplifier (LNA) is an effective and low-cost way of enhancing this signal quality through signal amplification at the receiver. In this work, LNA simulation and a novel design was carried out using the N76038A field effect transistor (FET). To ensure it is stable over a wide range of frequencies, the input and output stability of the transistor were plotted over its operating frequencies (0.1 GHz to 18 GHz). Constant gain and noise figure circles were plotted and the source impedance properly chosen. The input network was matched to the source impedance and conjugate matching used to match the output. The schematic was converted to microstrip and produced on a printed circuit board. Testing was carried out using the vector network analyser (VNA) and matching errors then corrected by calibration process. The fabricated LNA has a gain of 13.76dB and noise figure of 1.57dB which is in close agreement with a simulation result of 14.25dB and 1.56dB respectively.

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