scholarly journals Large 3rd Order Optical Kerr Nonlinearity in 2D PdSe2 Dichalcogenide Films for Integrated Nonlinear Photonic Chips

Author(s):  
David Moss

<p>As a novel layered noble metal dichalcogenide material, palladium diselenide (PdSe<sub>2</sub>) has attracted wide interest due to its excellent optical and electronic properties. In this work, a strong third-order nonlinear optical response of 2D PdSe<sub>2</sub> films is reported. We conduct both open-aperture (OA) and closed-aperture (CA) Z-scan measurements with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe<sub>2</sub> film of <i>β =</i> 3.26 ×10<sup>-8</sup> m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of <i>n</i><sub>2</sub> = -1.33×10<sup>-15</sup> m<sup>2</sup>/W – two orders of magnitude larger than bulk silicon. In addition, the variation of <i>n</i><sub>2</sub> as a function of laser intensity is also characterized, with <i>n</i><sub>2</sub> decreasing in magnitude when increasing incident laser intensity, becoming saturated at <i>n</i><sub>2</sub> = -9.96×10<sup>-16</sup> m<sup>2</sup>/W at high intensities. Our results show that the extraordinary third-order nonlinear optical properties of PdSe<sub>2</sub> have strong potential for high-performance nonlinear photonic devices.</p>

2021 ◽  
Author(s):  
David Moss

<p>As a novel layered noble metal dichalcogenide material, palladium diselenide (PdSe<sub>2</sub>) has attracted wide interest due to its excellent optical and electronic properties. In this work, a strong third-order nonlinear optical response of 2D PdSe<sub>2</sub> films is reported. We conduct both open-aperture (OA) and closed-aperture (CA) Z-scan measurements with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe<sub>2</sub> film of <i>β =</i> 3.26 ×10<sup>-8</sup> m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of <i>n</i><sub>2</sub> = -1.33×10<sup>-15</sup> m<sup>2</sup>/W – two orders of magnitude larger than bulk silicon. In addition, the variation of <i>n</i><sub>2</sub> as a function of laser intensity is also characterized, with <i>n</i><sub>2</sub> decreasing in magnitude when increasing incident laser intensity, becoming saturated at <i>n</i><sub>2</sub> = -9.96×10<sup>-16</sup> m<sup>2</sup>/W at high intensities. Our results show that the extraordinary third-order nonlinear optical properties of PdSe<sub>2</sub> have strong potential for high-performance nonlinear photonic devices.</p>


2021 ◽  
Author(s):  
David Moss

As a novel layered noble metal dichalcogenide material, palladium diselenide (PdSe2) has attracted wide interest due to its excellent optical and electronic properties. In this work, a strong third-order nonlinear optical response of 2D PdSe2 films is reported. We conduct both open-aperture (OA) and closed-aperture (CA) Z-scan measurements with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe2 film of β = 3.26 ×10-8 m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of n2 = -1.33×10-15 m2/W – two orders of magnitude larger than bulk silicon. In addition, the variation of n2 as a function of laser intensity is also characterized, with n2 decreasing in magnitude when increasing incident laser intensity, becoming saturated at n2 = -9.96×10-16 m2/W at high intensities. Our results show that the extraordinary third-order nonlinear optical properties of PdSe2 have strong potential for high-performance nonlinear photonic devices.


2021 ◽  
Author(s):  
David Moss ◽  
jiayang wu ◽  
linnan jia

Abstract As a novel layered noble metal dichalcogenide material, palladium diselenide (PdSe2) has attracted wide interest due to its excellent optical and electronic properties. In this work, a strong third-order nonlinear optical response of 2D PdSe2 films is reported. We conduct both open-aperture (OA) and closed-aperture (CA) Z-scan measurements with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe2 film of β = 3.26 ×10− 8 m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of n2 = -1.33×10− 15 m2/W – two orders of magnitude larger than bulk silicon. In addition, the variation of n2 as a function of laser intensity is also characterized, with n2 decreasing in magnitude when increasing incident laser intensity, becoming saturated at n2 = -9.96×10− 16 m2/W at high intensities. Our results show that the extraordinary third-order nonlinear optical properties of PdSe2 have strong potential for high-performance nonlinear photonic devices.


Author(s):  
david moss ◽  
jiayang wu

As a novel layered noble metal dichalcogenide material, palladium diselenide (PdSe2) has attracted wide interest due to its excellent optical and electronic properties. In this work, a strong third-order nonlinear optical response of 2D PdSe2 films is reported. We conduct both open-aperture (OA) and closed-aperture (CA) Z-scan measurements with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe2 film of &beta; = 3.26 &times;10-8 m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of n2 = -1.33&times;10-15 m2/W &ndash; two orders of magnitude larger than bulk silicon. In addition, the variation of n2 as a function of laser intensity is also characterized, with n2 decreasing in magnitude when increasing incident laser intensity, becoming saturated at n2 = -9.96&times;10-16 m2/W at high intensities. Our results show that the extraordinary third-order nonlinear optical properties of PdSe2 have strong potential for high-performance nonlinear photonic devices. Keywords: 2D materials, PdSe2 films, Z-scan technique, Kerr nonlinearity, nonlinear photonics.


2021 ◽  
Author(s):  
David Moss

Abstract We report a large third-order nonlinear optical response of palladium diselenide (PdSe2) films – a two-dimensional (2D) noble metal dichalcogenide material. Both open-aperture (OA) and closed-aperture (CA) Z-scan measurements are performed with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe2 film of β = 3.26 ×10− 8 m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of n2 = -1.33×10− 15 m2/W – two orders of magnitude larger than bulk silicon. We also characterize the variation of n2 as a function of laser intensity, observing that n2 decreases in magnitude with incident laser intensity, becoming saturated at n2 = -9.96×10− 16 m2/W at high intensities. These results verify the large third-order nonlinear optical response of 2D PdSe2 as well as its strong potential for high performance nonlinear photonic devices.


2020 ◽  
Author(s):  
linnan jia ◽  
Jiayang Wu ◽  
Baohua Jiao ◽  
Tieshan Yang ◽  
David Moss

<p>We report a large third-order nonlinear optical response of palladium diselenide (PdSe<sub>2</sub>) films – a two-dimensional (2D) noble metal dichalcogenide material. Both open-aperture (OA) and closed-aperture (CA) Z-scan measurements are performed with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe<sub>2</sub> film of <i>β =</i> 3.26 × 10<sup>-8</sup> m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of <i>n</i><sub>2</sub> = -1.33×10<sup>-15</sup> m<sup>2</sup>/W – two orders of magnitude larger than bulk silicon. We also characterize the variation of <i>n</i><sub>2</sub> as a function of laser intensity, observing that <i>n</i><sub>2</sub> decreases in magnitude with incident laser intensity, becoming saturated at <i>n</i><sub>2</sub> = -9.96×10<sup>-16</sup> m<sup>2</sup>/W at high intensities. These results verify the large third-order nonlinear optical response of 2D PdSe<sub>2</sub> as well as its strong potential for high performance nonlinear photonic devices.</p>


2020 ◽  
Author(s):  
linnan jia ◽  
Jiayang Wu ◽  
Baohua Jiao ◽  
Tieshan Yang ◽  
David Moss

<p>We report a large third-order nonlinear optical response of palladium diselenide (PdSe<sub>2</sub>) films – a two-dimensional (2D) noble metal dichalcogenide material. Both open-aperture (OA) and closed-aperture (CA) Z-scan measurements are performed with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe<sub>2</sub> film of <i>β =</i> 3.26 × 10<sup>-8</sup> m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of <i>n</i><sub>2</sub> = -1.33×10<sup>-15</sup> m<sup>2</sup>/W – two orders of magnitude larger than bulk silicon. We also characterize the variation of <i>n</i><sub>2</sub> as a function of laser intensity, observing that <i>n</i><sub>2</sub> decreases in magnitude with incident laser intensity, becoming saturated at <i>n</i><sub>2</sub> = -9.96×10<sup>-16</sup> m<sup>2</sup>/W at high intensities. These results verify the large third-order nonlinear optical response of 2D PdSe<sub>2</sub> as well as its strong potential for high performance nonlinear photonic devices.</p>


2020 ◽  
Author(s):  
linnan jia ◽  
Jiayang Wu ◽  
Baohua Jiao ◽  
Tieshan Yang ◽  
David Moss

<p>We report a large third-order nonlinear optical response of palladium diselenide (PdSe<sub>2</sub>) films – a two-dimensional (2D) noble metal dichalcogenide material. Both open-aperture (OA) and closed-aperture (CA) Z-scan measurements are performed with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe<sub>2</sub> film of <i>β =</i> 3.26 × 10<sup>-8</sup> m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of <i>n</i><sub>2</sub> = -1.33×10<sup>-15</sup> m<sup>2</sup>/W – two orders of magnitude larger than bulk silicon. We also characterize the variation of <i>n</i><sub>2</sub> as a function of laser intensity, observing that <i>n</i><sub>2</sub> decreases in magnitude with incident laser intensity, becoming saturated at <i>n</i><sub>2</sub> = -9.96×10<sup>-16</sup> m<sup>2</sup>/W at high intensities. These results verify the large third-order nonlinear optical response of 2D PdSe<sub>2</sub> as well as its strong potential for high performance nonlinear photonic devices.</p>


2020 ◽  
Author(s):  
David Moss

We report a large third-order nonlinear optical response of palladium diselenide (PdSe2) films – a two-dimensional (2D) noble metal dichalcogenide material. Both open-aperture (OA) and closed-aperture (CA) Z-scan measurements are performed with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe2 film of β = 3.26 ×10-8 m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of n2 = -1.33×10-15 m2/W – two orders of magnitude larger than bulk silicon. We also characterize the variation of n2 as a function of laser intensity, observing that n2 decreases in magnitude with incident laser intensity, becoming saturated at n2 = -9.96×10-16 m2/W at high intensities. These results verify the large third-order nonlinear optical response of 2D PdSe2 as well as its strong potential for high performance nonlinear photonic devices.


2021 ◽  
Author(s):  
David Moss

Abstract Layered two-dimensional (2D) GO films are integrated with silicon-on-insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through self-phase modulation (SPM). The GO films are integrated with SOI nanowires using a large-area, transfer-free, layer-by-layer coating method that yields precise control of the film thickness. The film placement and coating length are controlled by opening windows in the silica cladding of the SOI nanowires. Owing to the strong mode overlap between the SOI nanowires and the highly nonlinear GO films, the Kerr nonlinearity of the hybrid waveguides is significantly enhanced. Detailed SPM measurements using picosecond optical pulses show significant spectral broadening enhancement for SOI nanowires coated with 2.2-mm-long films of 1 − 3 layers of GO, and 0.4-mm-long films with 5 − 20 layers of GO. By fitting the experimental results with theory, the dependence of GO’s n2 on layer number and pulse energy is obtained, showing interesting physical insights and trends of the layered GO films from 2D monolayers to quasi bulk-like behavior. Finally, we show that by coating SOI nanowires with GO films the effective nonlinear parameter of SOI nanowires is increased 16 fold, with the effective nonlinear figure of merit (FOM) increasing by about 20 times to FOM > 5. These results reveal the strong potential of using layered GO films to improve the Kerr nonlinear optical performance of silicon photonic devices.


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