scholarly journals COMBINATION OF SYNTHETIC HIGH-PERFORMANCE RF AMPLIFICATION TECHNIQUES

T-Comm ◽  
2021 ◽  
Vol 15 (9) ◽  
pp. 11-16
Author(s):  
Oleg V. Varlamov ◽  
◽  
Dang C. Nguyen ◽  
Sergey E. Grychkin ◽  
◽  
...  
Keyword(s):  
High Performance ◽  
High Efficiency ◽  
Dynamic Range ◽  
Supply Voltage ◽  
Rf Power Amplifiers ◽  
Rf Power ◽  
Crest Factor ◽  
Combined Use ◽  
Radio Signals ◽  
Element Base

To amplify modern high crest factor telecommunication radio signals with high efficiency, switching operation modes of transistors and synthetic amplification methods are used. The most common of these are the Kahn method (EER – envelope elimination and restoration) and the outphasing method. However, application of these methods has a number of technological (in terms of element base capabilities) limitations on the bandwidth and dynamic range of amplified signal. To expand high-efficiency RF power amplifiers field of application, the possibilities of combination several different synthetic amplification techniques are being considered. Expressions are obtained for the theoretically achievable efficiency when combining the outphasing method with a bridge power combiner and pulse-step modulation of supply voltage. The dependence of average efficiency on the number of supply voltage levels is determined. RF amplified signal bandwidth and its dynamic range determine the minimum required pulse width of the PWM modulator for the EER amplifier. Variants of these characteristics dependence on the number of supply voltage levels are discussed with combined use of PWM and pulse-step modulation of the supply voltage. Directions for further research are formulated.

On the Continuity of High Efficiency Modes in Linear RF Power Amplifiers

2009 ◽  
Vol 19 (10) ◽  
pp. 665-667 ◽  
Author(s):  
S.C. Cripps ◽  
P.J. Tasker ◽  
A.L. Clarke ◽  
J. Lees ◽  
J. Benedikt
Keyword(s):  
Power Amplifiers ◽  
High Efficiency ◽  
Rf Power Amplifiers ◽  
Rf Power

Design of a Wideband High-Voltage High-Efficiency BiCMOS Envelope Amplifier for Micro-Base-Station RF Power Amplifiers

2012 ◽  
Vol 60 (6) ◽  
pp. 1850-1861 ◽  
Author(s):  
Myoungbo Kwak ◽  
Donald F. Kimball ◽  
Calogero D. Presti ◽  
Antonino Scuderi ◽  
Carmelo Santagati ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Amplifiers ◽  
High Efficiency ◽  
Base Station ◽  
Rf Power Amplifiers ◽  
Rf Power

An Ultra-Low-Voltage Low-Power Current-Mode True RMS-to-DC Converter

2016 ◽  
Vol 25 (06) ◽  
pp. 1650066 ◽  
Author(s):  
Pantre Kompitaya ◽  
Khanittha Kaewdang
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
High Performance ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Circuit Complexity ◽  
Current Mode ◽  
Cmos Technology ◽  
Low Supply Voltage

A current-mode CMOS true RMS-to-DC (RMS: root-mean-square) converter with very low voltage and low power is proposed in this paper. The design techniques are based on the implicit computation and translinear principle by using CMOS transistors that operate in the weak inversion region. The circuit can operate for two-quadrant input current with wide input dynamic range (0.4–500[Formula: see text]nA) with an error of less than 1%. Furthermore, its features are very low supply voltage (0.8[Formula: see text]V), very low power consumption ([Formula: see text]0.2[Formula: see text]nW) and low circuit complexity that is suitable for integrated circuits (ICs). The proposed circuit is designed using standard 0.18[Formula: see text][Formula: see text]m CMOS technology and the HSPICE simulation results show the high performance of the circuit and confirm the validity of the proposed design technique.

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