scholarly journals Detection of Positrons through Silicon Avalanche Diodes and Its Application to .BETA.+-.GAMMA. Coincidence Positron Lifetime Measurement.

RADIOISOTOPES ◽  
2001 ◽  
Vol 50 (11) ◽  
pp. 576-580 ◽  
Author(s):  
Prasert CHALERMKARNNON ◽  
Masao YUGA ◽  
Satoshi NAKATA ◽  
Shunji KISHIMOTO ◽  
Hideki ARAKI ◽  
...  
Keyword(s):  
Positron Lifetime ◽  
Lifetime Measurement ◽  
Avalanche Diodes ◽  
Gamma Coincidence ◽  
Positron Lifetime Measurement

Investigation of vacancy defect in InP crystal by positron lifetime measurement

2008 ◽  
Vol 69 (2-3) ◽  
pp. 372-375 ◽  
Author(s):  
Niefeng Sun ◽  
Luhong Mao ◽  
Weidong Mao ◽  
Hezou Wang ◽  
Xiang Wu ◽  
...  
Keyword(s):  
Positron Lifetime ◽  
Lifetime Measurement ◽  
Vacancy Defect ◽  
Positron Lifetime Measurement

scholarly journals Recent developments of the scanning positron microscope SPM for depth- and position-resolved positron lifetime measurement

2019 ◽  
Author(s):  
Johannes Mitteneder ◽  
Marcel Dickmann ◽  
Gottfried Kögel ◽  
Werner Egger ◽  
Günther Dollinger
Keyword(s):  
Positron Lifetime ◽  
Lifetime Measurement ◽  
Recent Developments ◽  
Positron Lifetime Measurement

Positron lifetime measurement and latent vacancy clusters in 14 MeV neutron irradiated nickel

1991 ◽  
Vol 179-181 ◽  
pp. 931-934 ◽  
Author(s):  
T. Yoshiie ◽  
M. Hasegawa ◽  
S. Kojima ◽  
K. Sato ◽  
Y. Saitoh ◽  
...  
Keyword(s):  
Positron Lifetime ◽  
Lifetime Measurement ◽  
Vacancy Clusters ◽  
Positron Lifetime Measurement

Studies of divacancy in Si using positron lifetime measurement

1994 ◽  
Vol 84 (1) ◽  
pp. 397-406 ◽  
Author(s):  
A. Kawasuso ◽  
M. Hasegawa ◽  
M. Suezawa ◽  
S. Yamaguchi ◽  
K. Sumino
Keyword(s):  
Positron Lifetime ◽  
Lifetime Measurement ◽  
Positron Lifetime Measurement

The observation of the lattice defect formation during hydrogenation and dehydrogenation in La(Ni,Sn)5 by in-situ positron lifetime measurement

2005 ◽  
Vol 885 ◽  
Author(s):  
Kouji Sakaki ◽  
Yumiko Nakamura ◽  
Yasuharu Shirai ◽  
Robert C Bowman ◽  
Etsuo Akiba
Keyword(s):  
Hydrogen Content ◽  
Positron Lifetime ◽  
Defect Formation ◽  
Lattice Defect ◽  
Lifetime Measurement ◽  
Lifetime Measurements ◽  
The Mean ◽  
Positron Lifetime Measurement ◽  
Sn Substitution

AbstractTo clarify the effect of Sn substitution for Ni of LaNi5 on the lattice defect formation during the hydrogenation and dehydrogenation processes, in-situ positron lifetime measurements were per-formed in LaNi4.93Sn0.27. During the hydrogenation, the mean positron lifetime, τm, monotonically increased up to 175 ps which is almost same as calculated positron lifetime for vacancy. This shows vacancy introduction by hydrogenation. The τm mean positron lifetime decreased down to 135 ps with hydrogen content during the dehydrogenation. It shows that the vacancies are removed from the lattice during the dehydrogenation. These results show that vacancies in LaNi4.93Sn0.27 are intro-duced and removed reversibly during the hydrogenation and dehydrogenation. The concentra-tions of vacancy and dislocation were 1 × 10−5 and 6 × 109 cm−2, respectively. These values are two orders lower than those in LaNi5.

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