Photoluminescence Spectra of the CdSe/ZnS Quantum Dot Doped Polymethylmethacrylate Material

2013 ◽  
Vol 33 (9) ◽  
pp. 0906003
Author(s):  
程成 Cheng Cheng ◽  
吴兹起 Wu Ziqi
2002 ◽  
Author(s):  
Alexander M. Mintairov ◽  
P. A. Blagnov ◽  
James L. Merz ◽  
Victor M. Ustinov ◽  
A. S. Vlasov ◽  
...  

2014 ◽  
Vol 875-877 ◽  
pp. 9-13
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee

We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carriers relaxing and thermal emission of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for sample with lower dot size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carriers relaxing process of quantum dot system is demonstrated by our model.


2002 ◽  
Vol 66 (4) ◽  
Author(s):  
M. Lomascolo ◽  
A. Vergine ◽  
T. K. Johal ◽  
R. Rinaldi ◽  
A. Passaseo ◽  
...  

2007 ◽  
Vol 6 (5) ◽  
pp. 492-496 ◽  
Author(s):  
Tzer-En Nee ◽  
Ya-Fen Wu ◽  
Jiunn-Chyi Lee ◽  
Jen-Cheng Wang

Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 60
Author(s):  
Mher A. Mkrtchyan ◽  
David B. Hayrapetyan ◽  
Eduard M. Kazaryan ◽  
Hayk A. Sarkisyan ◽  
Maxim Ya. Vinnichenko ◽  
...  

The theoretical investigation of interband and intraband transitions in an asymmetric biconvex lens-shaped quantum dot are considered in the presence of an external magnetic field. The selection rules for intraband transitions are obtained. The behaviors of linear and nonlinear absorption and photoluminescence spectra are observed for different temperatures and magnetic field strengths. The second and third harmonic generation coefficients as a function of the photon energy are examined both in the absence and presence of an external magnetic field.


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