Carrier Hopping and Relaxation in InAs/GaAs Quantum Dot Heterostructures

2014 ◽  
Vol 875-877 ◽  
pp. 9-13
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee
Keyword(s):  
Energy Level ◽  
Quantum Dot ◽  
Temperature Dependence ◽  
Thermal Emission ◽  
Carrier Dynamics ◽  
Photoluminescence Spectra ◽  
Discrete Energy ◽  
Discrete Energy Level ◽  
Size Uniformity ◽  
Gaas Quantum Dot

We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carriers relaxing and thermal emission of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for sample with lower dot size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carriers relaxing process of quantum dot system is demonstrated by our model.

Discrete energy level separation and the threshold temperature dependence of quantum dot lasers

2000 ◽  
Vol 77 (4) ◽  
pp. 466-468 ◽  
Author(s):  
Oleg B. Shchekin ◽  
Gyoungwon Park ◽  
Diana L. Huffaker ◽  
Dennis G. Deppe
Keyword(s):  
Energy Level ◽  
Quantum Dot ◽  
Temperature Dependence ◽  
Threshold Temperature ◽  
Quantum Dot Lasers ◽  
Discrete Energy ◽  
Discrete Energy Level

Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses

1997 ◽  
Vol 82 (9) ◽  
pp. 4489-4492 ◽  
Author(s):  
Y. T. Dai ◽  
J. C. Fan ◽  
Y. F. Chen ◽  
R. M. Lin ◽  
S. C. Lee ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Temperature Dependence ◽  
Photoluminescence Spectra ◽  
Gaas Quantum Dot

Carrier dynamics and lasing behavior of InAs/GaAs quantum dot lasers with short cavity lengths

2021 ◽  
Author(s):  
Zhonghui Yao ◽  
Xu Wang ◽  
Hongmei Chen ◽  
Tou Wang ◽  
Liang Qin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Carrier Dynamics ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot

scholarly journals Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models

Photonics ◽  
2019 ◽  
Vol 7 (1) ◽  
pp. 2 ◽  
Author(s):  
Chiara Ciano ◽  
Michele Virgilio ◽  
Luigi Bagolini ◽  
Leonetta Baldassarre ◽  
Andrea Rossetti ◽  
...  
Keyword(s):  
Energy Level ◽  
Quantum Wells ◽  
Quantum Cascade Lasers ◽  
Balance Model ◽  
Optically Pumped ◽  
Discrete Energy ◽  
Discrete Energy Level ◽  
Saturation Intensity ◽  
Sige Quantum Wells ◽  
Scattering Rates

n-type doped Ge quantum wells with SiGe barriers represent a promising heterostructure system for the development of radiation emitters in the terahertz range such as electrically pumped quantum cascade lasers and optically pumped quantum fountain lasers. The nonpolar lattice of Ge and SiGe provides electron–phonon scattering rates that are one order of magnitude lower than polar GaAs. We have developed a self-consistent numerical energy-balance model based on a rate equation approach which includes inelastic and elastic inter- and intra-subband scattering events and takes into account a realistic two-dimensional electron gas distribution in all the subband states of the Ge/SiGe quantum wells by considering subband-dependent electronic temperatures and chemical potentials. This full-subband model is compared here to the standard discrete-energy-level model, in which the material parameters are limited to few input values (scattering rates and radiative cross sections). To provide an experimental case study, we have epitaxially grown samples consisting of two asymmetric coupled quantum wells forming a three-level system, which we optically pump with a free electron laser. The benchmark quantity selected for model testing purposes is the saturation intensity at the 1→3 intersubband transition. The numerical quantum model prediction is in reasonable agreement with the experiments and therefore outperforms the discrete-energy-level analytical model, of which the prediction of the saturation intensity is off by a factor 3.

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