Investigation of Photoluminescence Spectra of Excitons and Biexcitons in Strongly Prolate Ellipsoidal Quantum Dot

We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carriers relaxing and thermal emission of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for sample with lower dot size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carriers relaxing process of quantum dot system is demonstrated by our model.

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Temperature dependence of photoluminescence spectra in n-type modulation-doped quantum dot arrays

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(99)00373-2 ◽

2000 ◽

Vol 7 (3-4) ◽

pp. 466-469 ◽

Cited By ~ 2

Author(s):

Shintaro Nomura ◽

Takuo Sugano ◽

Yoshinobu Aoyagi

Keyword(s):

Quantum Dot ◽

Temperature Dependence ◽

Photoluminescence Spectra

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INTERSUBBAND OPTICAL ABSORPTION COEFFICIENTS AND REFRACTIVE INDEX CHANGES OF AN ELLIPSOIDAL FINITE POTENTIAL QUANTUM DOT

Journal of Nonlinear Optical Physics & Materials ◽

10.1142/s021886351000511x ◽

2010 ◽

Vol 19 (01) ◽

pp. 131-143 ◽

Cited By ~ 7

Author(s):

G. REZAEI ◽

M. R. K. VAHDANI ◽

M. BARATI

Keyword(s):

Refractive Index ◽

Light Intensity ◽

Optical Absorption ◽

Quantum Dot ◽

Absorption Coefficient ◽

Optical Absorption Coefficient ◽

Matrix Formalism ◽

Ellipsoidal Quantum Dot ◽

Index Changes ◽

Intersubband Optical Absorption

Intersubband optical absorption coefficient and refractive index changes of a weakly prolate ellipsoidal quantum dot, using the compact-density matrix formalism and iterative method, are investigated. In this regard, the linear and nonlinear intersubband optical absorption coefficient and refractive index changes of a GaAs / Al x Ga 1-x As ellipsoidal quantum dot, as functions of the dot radius, ellipticity constant, stoichiometric ratio and incident light intensity are calculated. The results indicate that absorption coefficient and refractive index changes strongly depend on the light intensity, size and geometry of the dot and structure parameters such as aluminium concentration in GaAs / Al x Ga 1-x As structures.

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The energy spectrum of charge carriers in a strongly oblate ellipsoidal quantum dot

Technical Physics Letters ◽

10.1134/1.1505553 ◽

2002 ◽

Vol 28 (8) ◽

pp. 693-695

Author(s):

G. G. Zegrya ◽

O. V. Konstantinov ◽

A. V. Matveentsev

Keyword(s):

Energy Spectrum ◽

Quantum Dot ◽

Charge Carriers ◽

Ellipsoidal Quantum Dot

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