Laser coverage on defect in laser conditioning process

2012 ◽  
Vol 24 (6) ◽  
pp. 1385-1390 ◽  
Author(s):  
代福 Dai Fu ◽  
杨李茗 Yang Liming
Author(s):  
Ren Huan ◽  
Jiang Xiao-dong ◽  
Huang Zu-xin ◽  
Gan Rong-bing ◽  
Zhong Wei

2017 ◽  
Vol 25 (8) ◽  
pp. 1987-1994
Author(s):  
罗 阳 LUO Yang ◽  
胡国行 HU Guo-hang ◽  
赵元安 ZHAO Yuan-an ◽  
杨留江 YANG Liu-jiang ◽  
曹 珍 CAO Zhen ◽  
...  

2009 ◽  
Author(s):  
Yuanan Zhao ◽  
Guohang Hu ◽  
Jianda Shao ◽  
Xiaofeng Liu ◽  
Hongbo He ◽  
...  

2006 ◽  
Vol 45 (33) ◽  
pp. 8506 ◽  
Author(s):  
Bertrand Bertussi ◽  
Hervé Piombini ◽  
David Damiani ◽  
Matthieu Pommies ◽  
Xavier Le Borgne ◽  
...  

2005 ◽  
Author(s):  
Matthieu Pommiès ◽  
David Damiani ◽  
Bertrand Bertussi ◽  
Jérémie Capoulade ◽  
Jean-Yves Natoli ◽  
...  

1978 ◽  
Vol 23 (4) ◽  
pp. 230-231
Author(s):  
BEN A. WILLIAMS
Keyword(s):  

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.


2021 ◽  
Vol 284 ◽  
pp. 112020
Author(s):  
Yanting Dong ◽  
Yanwen Shen ◽  
Dongdong Ge ◽  
Chang Bian ◽  
Haiping Yuan ◽  
...  

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