Substrate temperature dependent structural and optical properties of ZnSe thin films by electron beam evaporation technique

2009 ◽  
Vol 55 (4) ◽  
pp. 1577-1581 ◽  
Author(s):  
Suthan Kissinger ◽  
Natarajan Velmuruganb ◽  
K. Perumalc
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Electron Beam Evaporation ◽  
Temperature Dependent ◽  
Structural And Optical Properties ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Znse Thin Films

Influence of Substrate Temperature on Tin Oxide Thin Films Deposited by Electron Beam Evaporation Technique

1992 ◽  
Vol 242 ◽  
Author(s):  
S. M. Rozati ◽  
S. Mirzapour ◽  
M. G. Takwale ◽  
B. R. Marathe ◽  
V. G. Bhide
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Electron Beam Evaporation ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Influence Of Substrate ◽  
Tin Oxide Films ◽  
Deposited Films

ABSTRACTTransparent conducting tin oxide films were prepared by an electron beam evaporation technique. As-deposited films were amorphous or polycrystalline depending on the substrate temperature and the time of deposition. In order to get transparent and conducting thin films of SnO2, as-deposited films were subjected to further heat-treatment in air at 650°C for 2 hours. Physical properties of as-deposited and annealed films are discussed with reference to substrate temperature and deposition time.

OPTICAL PROPERTIES OF AsSeTl THIN FILMS DEPOSITED BY e-BEAM EVAPORATION TECHNIQUE

2011 ◽  
Vol 18 (01n02) ◽  
pp. 71-75 ◽  
Author(s):  
M. M. ABD EL-RAHEEM
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Band Gap ◽  
Optical Band Gap ◽  
Plasma Frequency ◽  
Electron Beam Evaporation ◽  
Dispersion Energy ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique

Five compositions of the system As 25 Se 75-x Tl x (x = 12, 16, 20, 24 and 28%) have been prepared using melt quench technique. Thin films of the same thickness (200 nm) were deposited by electron beam evaporation technique. Optical and other parameters of the films have been studied. The optical band gap E op found to decrease by increasing the coordination number r and average number of bonds per atom N av and by decreasing the heat of atomization H s . Other parameters as an oscillator energy E o , dispersion energy E d and plasma frequency ω p found to be affected by changing thallium content.

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