Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy

2013 ◽  
Vol 62 (9) ◽  
pp. 1291-1294 ◽  
Author(s):  
Su-Ik Park ◽  
Dong-Hyun Jang ◽  
Jong-In Shim ◽  
Dong-Soo Shin
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Field Measurement ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Internal Electric Field ◽  
Electric Field Measurement ◽  
Electroreflectance Spectroscopy

Effect of internal electric field on non-radiative carrier recombination in the strain-balanced InGaAs/GaAsP multiple quantum well solar cells

2014 ◽  
Vol 211 (2) ◽  
pp. 444-448 ◽  
Author(s):  
Atsuhiko Fukuyama ◽  
Taketo Aihara ◽  
Yuki Yokoyama ◽  
Michiya Kojima ◽  
Hiromasa Fujii ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Internal Electric Field ◽  
Carrier Recombination

Spectroscopic determination of the band discontinuity in GaSb/AlSb multiple-quantum-well structures

1988 ◽  
Vol 37 (11) ◽  
pp. 6278-6284 ◽  
Author(s):  
U. Cebulla ◽  
G. Tränkle ◽  
U. Ziem ◽  
A. Forchel ◽  
G. Griffiths ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Spectroscopic Determination ◽  
Multiple Quantum ◽  
Quantum Well Structures

scholarly journals Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well

2010 ◽  
Vol 107 (11) ◽  
pp. 114303 ◽  
Author(s):  
V. Ramesh ◽  
A. Kikuchi ◽  
K. Kishino ◽  
M. Funato ◽  
Y. Kawakami
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Relaxation Effect ◽  
Multiple Quantum
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