Influence of a self-assembled monolayer on indium-zinc-oxide semiconductor thin-film transistors

2014 ◽  
Vol 65 (10) ◽  
pp. 1555-1558 ◽  
Author(s):  
Yong Suk Yang ◽  
In-Kyu You ◽  
Sung-Hoon Hong ◽  
Ju-hyeon Park ◽  
Ho-Gyeong Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Self Assembled Monolayer ◽  
Indium Zinc Oxide ◽  
Semiconductor Thin Film ◽  
Self Assembled

Amorphous Indium–Zinc Oxide Semiconductor Thin-Film Transistors

2014 ◽  
Vol 9 (3) ◽  
pp. 388-391
Author(s):  
Jun-Yi Li ◽  
Sheng-Po Chang ◽  
Wen-Chen Hua ◽  
Shoou-Jinn Chang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Indium Zinc Oxide ◽  
Semiconductor Thin Film

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

2009 ◽  
Vol 95 (25) ◽  
pp. 252103 ◽  
Author(s):  
Chang-Jung Kim ◽  
Sangwook Kim ◽  
Je-Hun Lee ◽  
Jin-Seong Park ◽  
Sunil Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Indium Zinc Oxide ◽  
Semiconductor Thin Film

scholarly journals Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Sheng-Po Chang ◽  
San-Syong Shih
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Field Effect Mobility ◽  
Excellent Performance ◽  
Current Ratio ◽  
Indium Zinc Oxide ◽  
Sputtering Power

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO) thin film transistors (TFTs). Co-sputtering-processedα-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition ofα-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE), carrier concentration, and subthreshold swing (S) of the device. Our results indicated that we could successfully and easily fabricateα-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processedα-HfIZO TFTs were fabricated with an on/off current ratio of~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

Engineering of Flexo- and Gravure-Printed Indium–Zinc-Oxide Semiconductor Layers for High-Performance Thin-Film Transistors

2015 ◽  
Vol 62 (9) ◽  
pp. 2871-2877 ◽  
Author(s):  
Dieter Spiehl ◽  
Marc Haming ◽  
Hans Martin Sauer ◽  
Klaus Bonrad ◽  
Edgar Dorsam
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Semiconductor ◽  
Indium Zinc Oxide

Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors

2015 ◽  
Vol 15 (6) ◽  
pp. 675-678 ◽  
Author(s):  
Jihyun Ka ◽  
Edward Namkyu Cho ◽  
Min-Jung Lee ◽  
Jae-Min Myoung ◽  
Ilgu Yun
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium ◽  
Semiconductor Thin Film ◽  
Electrode Metal

scholarly journals Remote Doping Effects of Indium–Gallium–Zinc Oxide Thin-Film Transistors by Silane-Based Self-Assembled Monolayers

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 481
Author(s):  
Juhyung Seo ◽  
Hocheon Yoo
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Indium Gallium Zinc Oxide ◽  
Self Assembled Monolayer ◽  
Assembled Monolayers ◽  
Indium Gallium ◽  
Self Assembled

Oxide thin-film transistors (TFTs), including indium–gallium–zinc oxide (IGZO) TFTs, have been widely investigated because of their excellent properties, such as compatibility with flexible substrates, high carrier mobility, and easy-to-fabricate TFT processes. However, to increase the use of oxide semiconductors in electronic products, an effective doping method that can control the electrical characteristics of oxide TFTs is required. Here, we comprehensively investigate the effect of silane-based self-assembled monolayer (SAM) doping on IGZO TFTs. Instead of a complex doping process, the electrical performance can be enhanced by anchoring silane-based SAMs on the IGZO surface. Furthermore, differences in the doping effect based on the structure of SAMs were analyzed; the analysis offers a systematic guideline for effective electrical characteristic control in IGZO TFTs.

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