Engineering of Flexo- and Gravure-Printed Indium–Zinc-Oxide Semiconductor Layers for High-Performance Thin-Film Transistors

2015 ◽  
Vol 62 (9) ◽  
pp. 2871-2877 ◽  
Author(s):  
Dieter Spiehl ◽  
Marc Haming ◽  
Hans Martin Sauer ◽  
Klaus Bonrad ◽  
Edgar Dorsam
2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Sheng-Po Chang ◽  
San-Syong Shih

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO) thin film transistors (TFTs). Co-sputtering-processedα-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition ofα-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE), carrier concentration, and subthreshold swing (S) of the device. Our results indicated that we could successfully and easily fabricateα-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processedα-HfIZO TFTs were fabricated with an on/off current ratio of~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.


2019 ◽  
Vol 216 (18) ◽  
pp. 1900274 ◽  
Author(s):  
Dong Lin ◽  
Kaiwen Li ◽  
Jingjing Shao ◽  
Qun Zhang

2017 ◽  
Vol 136 ◽  
pp. 43-50 ◽  
Author(s):  
Yang Song ◽  
Alexander Katsman ◽  
Amy L. Butcher ◽  
David C. Paine ◽  
Alexander Zaslavsky

2014 ◽  
Vol 65 (10) ◽  
pp. 1555-1558 ◽  
Author(s):  
Yong Suk Yang ◽  
In-Kyu You ◽  
Sung-Hoon Hong ◽  
Ju-hyeon Park ◽  
Ho-Gyeong Yun ◽  
...  

2014 ◽  
Vol 9 (3) ◽  
pp. 388-391
Author(s):  
Jun-Yi Li ◽  
Sheng-Po Chang ◽  
Wen-Chen Hua ◽  
Shoou-Jinn Chang

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