scholarly journals Efros–Shklovskii hopping in the electronic transport in 2D p-GaAs

2020 ◽  
Vol 60 (3) ◽  
Author(s):  
Said Dlimi ◽  
Lhoussine Limouny ◽  
Jamal Hemine ◽  
Adil Echchelh ◽  
Abdelhamid El kaaouachi
Keyword(s):  
Magnetic Field ◽  
Electronic Transport ◽  
Zero Magnetic Field ◽  
Variable Range Hopping ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Coulomb Gap ◽  
Variable Range ◽  
Temperature Range ◽  
Hole Interaction

We have investigated the resistivity of a 2D hole system in GaAs in the temperature range 200 mK < T < 800 mK at zero magnetic field and low hole densities when the system is near the metal–insulator transition in the insulating side. We have found that the resistivity follows the Efros–Shklovskii variable range hopping (ES-VRH) law, this behaviour is consistent with the existence of a Coulomb gap. The resistivity scales with temperature and the prefactor has been found independent of temperature and density, thus confirming the dominance of hole–hole interaction.

ANOMALOUS CROSSOVER FROM EFROS–SHKLOVSKII TO MOTT VARIABLE RANGE HOPPING IN SILICON MOSFETs

2013 ◽  
Vol 27 (21) ◽  
pp. 1350146 ◽  
Author(s):  
L. LIMOUNY ◽  
A. EL KAAOUACHI ◽  
S. DLIMI ◽  
A. SYBOUS ◽  
A. NARJIS ◽  
...  
Keyword(s):  
Electron System ◽  
Zero Magnetic Field ◽  
Variable Range Hopping ◽  
Dimensional Electron ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Exponential Factor ◽  
Coulomb Gap ◽  
Variable Range ◽  
Dimensional Electron System

In this paper, we investigate the temperature dependence of the electrical resistivity of a two-dimensional electron system in n-channel Si -MOSFETs at zero magnetic field down to 0.2 K. At low electron densities, near the metal–insulator transition point from the insulating side, our results show the existence of a crossover, from Efros–Shklovskii variable range hopping (ES-VRH), which is consistent with the existence of a Coulomb gap, where ρ = ρ0 exp (T ES /T)1/2 to Mott regime, where ρ = ρ0 exp (T M /T)1/3. With ρ0 is a pre-exponential factor that is found to be close to 2 (h/e2), this crossover occurs when T ~ 1 K .

Metal–insulator transition and variable-range hopping conductivity of n-CdSb in magnetic field

2007 ◽  
Vol 68 (2) ◽  
pp. 272-279 ◽  
Author(s):  
R. Laiho ◽  
A.V. Lashkul ◽  
K.G. Lisunov ◽  
E. Lähderanta ◽  
M.O. Safonchik ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Insulator Transition ◽  
Variable Range Hopping ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Hopping Conductivity ◽  
Variable Range
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