Application of a random resistor network model of space–time to various physical phenomena

2012 ◽  
Vol 25 (4) ◽  
pp. 484-487
Author(s):  
Jerome Cantor
2008 ◽  
Vol 25 (11) ◽  
pp. 4124-4127 ◽  
Author(s):  
Xu Jie ◽  
Zhang Duan-Ming ◽  
Deng Zong-Wei ◽  
Yang Feng-Xia ◽  
Li Zhi-Hua ◽  
...  

2004 ◽  
Vol 37 (15) ◽  
pp. 2170-2174 ◽  
Author(s):  
C Grimaldi ◽  
T Maeder ◽  
P Ryser ◽  
S Strässler

2007 ◽  
Vol 99 (17) ◽  
Author(s):  
Vadim V. Cheianov ◽  
Vladimir I. Fal’ko ◽  
Boris L. Altshuler ◽  
Igor L. Aleiner

1992 ◽  
Vol 46 (19) ◽  
pp. 12137-12141 ◽  
Author(s):  
K. W. Yu ◽  
P. Y. Tong

2000 ◽  
Vol 612 ◽  
Author(s):  
C. Pennetta ◽  
L. Reggiani ◽  
Gy. Trefán ◽  
F. Fantini ◽  
A. Scorzoni ◽  
...  

AbstractWe present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network. The main features of experiments including Black's law and the log-normal distribution of the times to failure are well reproduced together with compositional effects showing up in early stage measurements made on Al-0.5%Cu and Al-1%Si lines.


1990 ◽  
Vol 41 (7) ◽  
pp. 4610-4618 ◽  
Author(s):  
A. B. Harris ◽  
Yigal Meir ◽  
Amnon Aharony

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