Crack Detection and Analyses Using Resonance Ultrasonic Vibrations in Full-Size Crystalline Silicon Wafers

2005 ◽  
pp. 509-514 ◽  
Author(s):  
A.E. Belyaev ◽  
O. Polupan ◽  
W. Dallas ◽  
Sergei S. Ostapenko ◽  
D. Hess ◽  
...  
Keyword(s):  
Crack Detection ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Ultrasonic Vibrations ◽  
Full Size

Crack detection and analyses using resonance ultrasonic vibrations in full-size crystalline silicon wafers

2006 ◽  
Vol 88 (11) ◽  
pp. 111907 ◽  
Author(s):  
A. Belyaev ◽  
O. Polupan ◽  
W. Dallas ◽  
S. Ostapenko ◽  
D. Hess ◽  
...  
Keyword(s):  
Crack Detection ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Ultrasonic Vibrations ◽  
Full Size

Crack Detection and Analyses Using Resonance Ultrasonic Vibrations in Full-Size Crystalline Silicon Wafers

2005 ◽  
Vol 108-109 ◽  
pp. 509-514 ◽  
Author(s):  
A.E. Belyaev ◽  
O. Polupan ◽  
W. Dallas ◽  
Sergei S. Ostapenko ◽  
D. Hess ◽  
...  
Keyword(s):  
Frequency Shift ◽  
Crack Detection ◽  
Crystalline Silicon ◽  
High Sensitivity ◽  
Silicon Wafers ◽  
Response Analysis ◽  
Ultrasonic Vibrations ◽  
Ultrasonic Probe ◽  
Full Size ◽  
Time Frequency

An experimental approach for fast crack detection and length determination in fullsize solar-grade crystalline silicon wafers using a Resonance Ultrasonic Vibrations (RUV) technique is presented. The RUV method is based on excitation of the longitudinal ultrasonic vibrations in full-size wafers. Using an external piezoelectric transducer combined with a high sensitivity ultrasonic probe and computer controlled data acquisition system, real-time frequency response analysis can be accomplished. On a set of identical crystalline Si wafers with artificially introduced periphery cracks, it was demonstrated that the crack results in a frequency shift in a selected RUV peak to a lower frequency and increases the resonance peak band width. Both characteristics were found to increase with the length of the crack. The frequency shift and bandwidth serve as reliable indicators of the crack appearance in silicon wafers and are suitable for mechanical quality control and fast wafer inspection.

Crack Detection in Full Size Cz-Silicon Wafers Using Lamb Wave Air Coupled Ultrasonic Testing (LAC-UT)

2011 ◽  
Vol 31 (1) ◽  
pp. 46-55 ◽  
Author(s):  
Sunil Kishore Chakrapani ◽  
M. Janardhan Padiyar ◽  
Krishnan Balasubramaniam
Keyword(s):  
Lamb Wave ◽  
Ultrasonic Testing ◽  
Crack Detection ◽  
Silicon Wafers ◽  
Full Size

Crack detection in single-crystalline silicon wafers using impact testing

2008 ◽  
Vol 69 (8) ◽  
pp. 755-760 ◽  
Author(s):  
C. Hilmersson ◽  
D.P. Hess ◽  
W. Dallas ◽  
S. Ostapenko
Keyword(s):  
Crack Detection ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Impact Testing ◽  
Single Crystalline Silicon ◽  
Single Crystalline

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Carrier Lifetime Measurements by Photoconductance at Low Temperature on Passivated Crystalline Silicon Wafers

2013 ◽  
Vol 1536 ◽  
pp. 119-125 ◽  
Author(s):  
Guillaume Courtois ◽  
Bastien Bruneau ◽  
Igor P. Sobkowicz ◽  
Antoine Salomon ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Doping Density ◽  
Lifetime Measurements ◽  
Effective Lifetime

ABSTRACTWe propose an implementation of the PCD technique to minority carrier effective lifetime assessment in crystalline silicon at 77K. We focus here on (n)-type, FZ, polished wafers passivated by a-Si:H deposited by PECVD at 200°C. The samples were immersed into liquid N2 contained in a beaker placed on a Sinton lifetime tester. Prior to be converted into lifetimes, data were corrected for the height shift induced by the beaker. One issue lied in obtaining the sum of carrier mobilities at 77K. From dark conductance measurements performed on the lifetime tester, we extracted an electron mobility of 1.1x104 cm².V-1.s-1 at 77K, the doping density being independently calculated in order to account for the freezing effect of dopants. This way, we could obtain lifetime curves with respect to the carrier density. Effective lifetimes obtained at 77K proved to be significantly lower than at RT and not to depend upon the doping of the a-Si:H layers. We were also able to experimentally verify the expected rise in the implied Voc, which, on symmetrically passivated wafers, went up from 0.72V at RT to 1.04V at 77K under 1 sun equivalent illumination.

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