Resonance ultrasonic vibrations for crack detection in photovoltaic silicon wafers

An experimental approach for fast crack detection and length determination in fullsize solar-grade crystalline silicon wafers using a Resonance Ultrasonic Vibrations (RUV) technique is presented. The RUV method is based on excitation of the longitudinal ultrasonic vibrations in full-size wafers. Using an external piezoelectric transducer combined with a high sensitivity ultrasonic probe and computer controlled data acquisition system, real-time frequency response analysis can be accomplished. On a set of identical crystalline Si wafers with artificially introduced periphery cracks, it was demonstrated that the crack results in a frequency shift in a selected RUV peak to a lower frequency and increases the resonance peak band width. Both characteristics were found to increase with the length of the crack. The frequency shift and bandwidth serve as reliable indicators of the crack appearance in silicon wafers and are suitable for mechanical quality control and fast wafer inspection.

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Crack Detection and Analyses Using Resonance Ultrasonic Vibrations in Full-Size Crystalline Silicon Wafers

Solid State Phenomena - Gettering and Defect Engineering in Semiconductor Technology XI ◽

10.4028/3-908451-13-2.509 ◽

2005 ◽

pp. 509-514 ◽

Cited By ~ 1

Author(s):

A.E. Belyaev ◽

O. Polupan ◽

W. Dallas ◽

Sergei S. Ostapenko ◽

D. Hess ◽

...

Keyword(s):

Crack Detection ◽

Crystalline Silicon ◽

Silicon Wafers ◽

Ultrasonic Vibrations ◽

Full Size

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Crack Detection in Full Size Cz-Silicon Wafers Using Lamb Wave Air Coupled Ultrasonic Testing (LAC-UT)

Journal of Nondestructive Evaluation ◽

10.1007/s10921-011-0119-3 ◽

2011 ◽

Vol 31 (1) ◽

pp. 46-55 ◽

Cited By ~ 25

Author(s):

Sunil Kishore Chakrapani ◽

M. Janardhan Padiyar ◽

Krishnan Balasubramaniam

Keyword(s):

Lamb Wave ◽

Ultrasonic Testing ◽

Crack Detection ◽

Silicon Wafers ◽

Full Size

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Development and Research of Models and Processes of Formation in Silicon Plates p-n Junctions and Hidden Layers under the Influence of Ultrasonic Vibrations and Mechanical Stresses

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.844.155 ◽

2020 ◽

Vol 844 ◽

pp. 155-167

Author(s):

Andriy Semenov ◽

Serhii Baraban ◽

Mariia Baraban ◽

Olena Zhahlovska ◽

Serhii Tsyrulnyk ◽

...

Keyword(s):

Mathematical Models ◽

Ion Beam ◽

Mechanical Stresses ◽

Silicon Wafers ◽

Ultrasonic Vibrations ◽

Ultrasonic Oscillations ◽

Dielectric Layers ◽

Interstitial Defects

In this article, mathematical models and processes of introducing homogeneous ultrasonic oscillations and mechanical stresses into silicon wafers in the direction of their thickness are developed and investigated, and mathematical models of the movement of interstitial defects in silicon wafers created by the processes of ion-beam transients at the transitions of ion-beam transitions and hidden dielectric layers using the action of ultrasound oscillations and mechanical stresses, both in the process of implantation of impurities and before the annealing of plates upon activation of the impurities are developed and investigated.

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