Oxidation of TiAlCrSiN Thin Films at 1000°C in Air
2015 ◽
Vol 719-720
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pp. 127-131
Keyword(s):
TiAlCrSiN thin films consisting of alternating TiCrN and AlSiN nanolayers were deposited by cathodic arc plasma deposition, and oxidized at 1000°C in air. When oxidized for 10 h, about 1 μm-thick oxide sale formed, and its surface was covered with numerous tiny oxide crystallites. When oxidized for 30 h, about 2.5 μm-thick oxide scale formed, and began to spall from the surface. When oxidized for 80 h, the oxide sale was about 12.2 μm-thick. The film had a reasonable oxidation resistance due mainly to Al, Cr, and Si, which formed protective oxides.
2013 ◽
Vol 699
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pp. 612-615
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2011 ◽
Vol 206
(6)
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pp. 1507-1510
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2005 ◽
Vol 200
(5-6)
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pp. 1391-1394
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2008 ◽
Vol 202
(22-23)
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pp. 5395-5399
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2007 ◽
Vol 202
(4-7)
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pp. 962-966
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2010 ◽
Vol 204
(11)
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pp. 1697-1701
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2016 ◽
Vol 42
(13)
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pp. 14438-14442
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Keyword(s):
Keyword(s):