Effect of the Ti-target arc current on the properties of Ti-doped ZnO thin films prepared by dual-target cathodic arc plasma deposition

2016 ◽  
Vol 42 (13) ◽  
pp. 14438-14442 ◽  
Author(s):  
Shuo-Fu Hsu ◽  
Min-Hang Weng ◽  
Jyh-Horng Chou ◽  
Chun-Hsiung Fang ◽  
Ru-Yuan Yang
2005 ◽  
Vol 200 (5-6) ◽  
pp. 1391-1394 ◽  
Author(s):  
S.K. Kim ◽  
P.V. Vinh ◽  
J.H. Kim ◽  
T. Ngoc

2015 ◽  
Vol 719-720 ◽  
pp. 127-131
Author(s):  
Min Jung Kim ◽  
Dong Bok Lee

TiAlCrSiN thin films consisting of alternating TiCrN and AlSiN nanolayers were deposited by cathodic arc plasma deposition, and oxidized at 1000°C in air. When oxidized for 10 h, about 1 μm-thick oxide sale formed, and its surface was covered with numerous tiny oxide crystallites. When oxidized for 30 h, about 2.5 μm-thick oxide scale formed, and began to spall from the surface. When oxidized for 80 h, the oxide sale was about 12.2 μm-thick. The film had a reasonable oxidation resistance due mainly to Al, Cr, and Si, which formed protective oxides.


2008 ◽  
Vol 202 (22-23) ◽  
pp. 5395-5399 ◽  
Author(s):  
Sun Kyu Kim ◽  
Pham Van Vinh ◽  
Jae Wook Lee

2007 ◽  
Vol 202 (4-7) ◽  
pp. 962-966 ◽  
Author(s):  
Mu-Hsuan Chan ◽  
Wei-Yu Ho ◽  
Da-Yung Wang ◽  
Fu-Hsing Lu

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