Simulation of the Effect of Power on the Properties of Si-Based Films Deposited by PECVD
2011 ◽
Vol 415-417
◽
pp. 1859-1862
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Keyword(s):
Two-dimensional modeling and the computational fluid dynamics simulation are performed to investigate the deposition rate and the uniformity of the thin film under different power in PECVD reaction chamber using 13.56 MHz frequency. The results of the simulation show that as the power increased, the deposition rate of the thin film first increased gradually and then saturated, but the changes of power have little effect on uniformity.
2019 ◽
Vol 59
(2)
◽
pp. 981-991
2011 ◽
Vol 166
(1)
◽
pp. 306-314
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2011 ◽
Vol 173
(2)
◽
pp. 564-573
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2018 ◽
Vol 49
(1)
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pp. 20-31
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2016 ◽
Vol 38
(18)
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pp. 1606-1615
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2012 ◽
Vol 141
(1)
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pp. 185-198
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2009 ◽
Vol 6
(11)
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pp. 1902-1908
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Vol 7
(4)
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pp. 365-376