Study of Photoelectrochemical Solar Cell Using WSe2 Crystal

The solar cells have been used as most promising device to convert light energy into electrical energy. In this paper authors have attempted to fabricate Photoelectrochemical solar cell with semiconductor electrode using TMDCs. The Photoelectrochemical solar cells are the solar cells which convert the solar energy into electrical energy. The photoelectrochemical cells are clean and inexhaustible sources of energy. The photoelectrochemical solar cells are fabricated using WSe2crystal and electrolyte solution of 0.025M I2, 0.5M NaI, 0.5M Na2SO4. Here the WSe2crystals were grown by direct vapour transport technique. In our investigations the solar cell parameters like short circuit current (Isc) and Open circuit voltage (Voc) were measured and from that Fill factor (F.F.) and photoconversion efficiency (η) are investigated. The results obtained shows that the value of efficiency and fill factor of solar cell varies with the illumination intensities.

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A Comparative Study between Silicon Germanium and Germanium Solar Cells by Numerical Simulation

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.761.341 ◽

2015 ◽

Vol 761 ◽

pp. 341-346 ◽

Cited By ~ 1

Author(s):

Ahmad Aizan Zulkefle ◽

Maslan Zainon ◽

Zaihasraf Zakaria ◽

Mohd Ariff Mat Hanafiah ◽

Nurul Huda Abdul Razak ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Silicon Germanium ◽

Fill Factor ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Cell Modeling ◽

Modeling Software

This paper presents the performance between silicon germanium (SiGe) and crystalline germanium (Ge) solar cells in terms of their simulated open circuit voltage, short circuit current density, fill factor and efficiency. The PC1D solar cell modeling software has been used to simulate and analyze the performance for both solar cells, and the total thickness is limited to 1μm of both SiGe and Ge solar cells. The Si0.1Ge0.9 thickness is varied from 10nm to 100nm to examine the effect of Si0.1Ge0.9 thickness on SiGe solar cell. The result of simulation exhibits the SiGe solar cell give a better performance compared to Ge solar cell. The efficiency of 9.74% (VOC = 0.48V, JSC = 27.86mA/cm2, FF =0.73) is achieved with Si0.1Ge0.9 layer of 0.1μm in thickness whilst 2.73% (VOC = 0.20V, JSC = 27.31mA/cm2, FF =0.50) efficiency is obtained from Ge solar cell.

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Damp-Heat Induced Performance Degradation for InGaP/GaAs/Ge Triple-Junction Solar Cell

Journal of Nanomaterials ◽

10.1155/2014/410717 ◽

2014 ◽

Vol 2014 ◽

pp. 1-6 ◽

Cited By ~ 1

Author(s):

Hwen-Fen Hong ◽

Tsung-Shiew Huang ◽

Wu-Yih Uen ◽

Yen-Yeh Chen

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Conversion Efficiency ◽

Triple Junction ◽

Fill Factor ◽

Open Circuit Voltage ◽

Short Circuit ◽

Short Circuit Current ◽

Energy Conversion Efficiency ◽

Open Circuit

We performed accelerated tests on sealed and nonsealed InGaP/InGaAs/Ge triple-junction (TJ) solar cells in a complex high temperature and high humidity environment and investigated the electrical properties over time. The degradation of energy conversion efficiency in nonsealed cells was found to be more serious than that in sealed cells. The short-circuit current (ISC), open-circuit voltage (VOC), and fill factor (FF) of sealed cells changed very slightly, though the conversion efficiency decreased 3.6% over 500 h of exposure. This decrease of conversion efficiency was suggested to be due to the deterioration of silicone encapsulant. TheISC,VOC, and FF of nonsealed cells decreased with increasing exposure time. By EL and SEM analysis, the root causes of degradation can be attributed to the damage and cracks near the edge of cells induced by the moisture ingress. It resulted in shunt paths that lead to a deterioration of the conversion efficiency of solar cell by increasing the leakage current, as well as decreasing open-circuit voltage and fill factor of nonsealed solar cells.

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The absorber and buffer layer thicknesses for CdTe/CdS based thin film solar cell efficiency at various operational temperatures

Indonesian Journal of Electrical Engineering and Computer Science ◽

10.11591/ijeecs.v24.i1.pp70-80 ◽

2021 ◽

Vol 24 (1) ◽

pp. 70

Author(s):

Omar Ghanim Ghazal ◽

Ahmed Waleed Kasim ◽

Nabeel Zuhair Tawfeeq

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Fill Factor ◽

Open Circuit Voltage ◽

Structural Parameters ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Window Layer ◽

The Impact

Cadmium telluride (CdTe)/cadmium sulfide (CdS) solar cell is a promising candidate for photovoltaic (PV) energy production, as fabrication costs are compared by silicon wafers. We include an analysis of CdTe/CdS solar cells while optimizing structural parameters. Solar cell capacitance simulator (SCAPS)-1D 3.3 software is used to analyze and develop energy-efficient. The impact of operating thermal efficiency on solar cells is highlighted in this article to explore the temperature dependence. PV parameters were calculated in the different absorber, buffer, and window layer thicknesses (CdTe, CdS, and SnO2). The effect of the thicknesses of the layers, and the fundamental characteristics of open-circuit voltage, fill factor, short circuit current, and solar energy conversion efficiency were studied. The results showed the thickness of the absorber and buffer layers could be optimized. The temperature had a major impact on the CdTe/CdS solar cells as well. The optimized solar cell has an efficiency performance of >14% when exposed to the AM1.5 G spectrum. CdTe 3000 nm, CdS 50 nm, SnO2 500 nm, and (at) T 300k were the I-V characteristics gave the best conversion open circuit voltage (Voc)=0.8317 volts, short circuit current density (Jsc)=23.15 mA/cm2, fill factor (FF)%=77.48, and efficiency (η)%=14.73. The results can be used to provide important guidance for future work on multi-junction solar cell design.

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Measured and Simulated Temperature Dependence of A-Si:H Solar Cell Parameters

MRS Proceedings ◽

10.1557/proc-426-19 ◽

1996 ◽

Vol 426 ◽

Author(s):

H. Stiebig ◽

Th. Eickhoff ◽

J. Zimmer ◽

C. Beneking ◽

H. Wagner

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Temperature Dependence ◽

Crystalline Silicon ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Cell Parameters ◽

Crystalline Silicon Solar Cells ◽

Device Modelling

AbstractIn contrast to the successful application of analytic equations to the current-voltage behaviour of crystalline silicon solar cells in the dark and under AM1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225–400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM 1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage Voc increases with lower T which is caused by the same trapping effect.

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Measured and Simulated Temperature Dependence of A-Si:H Solar Cell Parameters

MRS Proceedings ◽

10.1557/proc-420-855 ◽

1996 ◽

Vol 420 ◽

Cited By ~ 12

Author(s):

H. Stiebig ◽

Th. Eickhoff ◽

J. Zimmer ◽

C. Beneking ◽

H. Wagner

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Temperature Dependence ◽

Crystalline Silicon ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Cell Parameters ◽

Crystalline Silicon Solar Cells ◽

Device Modelling

AbstractIn contrast to the successful application of analytic equations to the current-voltage behaviour of crystalline silicon solar cells in the dark and under AM 1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225-400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM 1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage Voc increases with lower T which is caused by the same trapping effect.

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Fabrication of Affordable and Sustainable Solar Cells Using NiO/TiO2 P-N Heterojunction

International Journal of Photoenergy ◽

10.1155/2018/6062390 ◽

2018 ◽

Vol 2018 ◽

pp. 1-7 ◽

Cited By ~ 5

Author(s):

Kingsley O. Ukoba ◽

Freddie L. Inambao ◽

Andrew C. Eloka-Eboka

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Fill Factor ◽

Open Circuit Voltage ◽

Spray Pyrolysis Technique ◽

Low Cost ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Heterojunction Solar Cells

The need for affordable, clean, efficient, and sustainable solar cells informed this study. Metal oxide TiO2/NiO heterojunction solar cells were fabricated using the spray pyrolysis technique. The optoelectronic properties of the heterojunction were determined. The fabricated solar cells exhibit a short-circuit current of 16.8 mA, open-circuit voltage of 350 mV, fill factor of 0.39, and conversion efficiency of 2.30% under 100 mW/cm2 illumination. This study will help advance the course for the development of low-cost, environmentally friendly, and sustainable solar cell materials from metal oxides.

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CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽

10.3390/en14061684 ◽

2021 ◽

Vol 14 (6) ◽

pp. 1684

Author(s):

Alessandro Romeo ◽

Elisa Artegiani

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solar Cell ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Early Years ◽

Solar Cell Efficiency ◽

Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

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GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽

10.3390/cryst11070726 ◽

2021 ◽

Vol 11 (7) ◽

pp. 726

Author(s):

Ray-Hua Horng ◽

Yu-Cheng Kao ◽

Apoorva Sood ◽

Po-Liang Liu ◽

Wei-Cheng Wang ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Low Temperature ◽

Triple Junction ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Metal Line ◽

Solar Simulator ◽

Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

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SCAPS Simulation on P3HT:Graphene Nanocomposites Based Bulk-Heterojunction Organic Solar Cells

International Journal of Electrical & Electronic Systems Research (IEESR) ◽

10.24191/ieesr.v9i1.950 ◽

2019 ◽

Vol 9 (1) ◽

pp. 28

Author(s):

Nur Shakina Mohd Shariff ◽

Puteri Sarah Mohamad Saad ◽

Mohamad Rusop Mahmood

Keyword(s):

Solar Cells ◽

Organic Solar Cells ◽

Fill Factor ◽

Bulk Heterojunction ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Simulation Software ◽

Capacitance Voltage

There has been an increasing interest towards organic solar cells after the discovery of conjugated polymer and bulk-heterojunction concept. Eventhough organic solar cells are less expensive than inorganic solar cells but the power conversion energy is still considered low. The main objective of this research is to investigate the effect of the P3HT’s thickness and concentration towards the efficiency of the P3HT:Graphene solar cells. A simulation software that is specialize for photovoltaic called SCAPS is used in this research to simulate the effect on the solar cells. The solar cell’s structure will be drawn inside the simulation and the parameters for each layers is inserted. The result such as the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), efficiency (η), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristic will be calculated by the software and all the results will be put into one graph.

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Analytical Study of the Electrical Output Characteristics of c-Si Solar Cells by Cut and Shading Phenomena

Energies ◽

10.3390/en11123397 ◽

2018 ◽

Vol 11 (12) ◽

pp. 3397 ◽

Cited By ~ 1

Author(s):

Jong Lim ◽

Woo Shin ◽

Hyemi Hwang ◽

Young-Chul Ju ◽

Suk Ko ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Crystalline Silicon ◽

Short Circuit ◽

Incident Light ◽

Short Circuit Current ◽

Open Circuit ◽

Si Solar Cell ◽

Si Solar Cells ◽

Electrical Output

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.

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