Measured and Simulated Temperature Dependence of A-Si:H Solar Cell Parameters

1996 ◽  
Vol 426 ◽  
Author(s):  
H. Stiebig ◽  
Th. Eickhoff ◽  
J. Zimmer ◽  
C. Beneking ◽  
H. Wagner
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Temperature Dependence ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Cell Parameters ◽  
Crystalline Silicon Solar Cells ◽  
Device Modelling

AbstractIn contrast to the successful application of analytic equations to the current-voltage behaviour of crystalline silicon solar cells in the dark and under AM1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225–400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM 1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage Voc increases with lower T which is caused by the same trapping effect.

Measured and Simulated Temperature Dependence of A-Si:H Solar Cell Parameters

1996 ◽  
Vol 420 ◽  
Author(s):  
H. Stiebig ◽  
Th. Eickhoff ◽  
J. Zimmer ◽  
C. Beneking ◽  
H. Wagner
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Temperature Dependence ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Cell Parameters ◽  
Crystalline Silicon Solar Cells ◽  
Device Modelling

AbstractIn contrast to the successful application of analytic equations to the current-voltage behaviour of crystalline silicon solar cells in the dark and under AM 1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225-400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM 1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage Voc increases with lower T which is caused by the same trapping effect.

Study of Photoelectrochemical Solar Cell Using WSe2 Crystal

2013 ◽  
Vol 665 ◽  
pp. 330-335 ◽  
Author(s):  
Ripal Parmar ◽  
Dipak Sahay ◽  
R.J. Pathak ◽  
R.K. Shah
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Electrical Energy ◽  
Open Circuit ◽  
Cell Parameters ◽  
Photoelectrochemical Solar Cell ◽  
Photoelectrochemical Solar Cells

The solar cells have been used as most promising device to convert light energy into electrical energy. In this paper authors have attempted to fabricate Photoelectrochemical solar cell with semiconductor electrode using TMDCs. The Photoelectrochemical solar cells are the solar cells which convert the solar energy into electrical energy. The photoelectrochemical cells are clean and inexhaustible sources of energy. The photoelectrochemical solar cells are fabricated using WSe2crystal and electrolyte solution of 0.025M I2, 0.5M NaI, 0.5M Na2SO4. Here the WSe2crystals were grown by direct vapour transport technique. In our investigations the solar cell parameters like short circuit current (Isc) and Open circuit voltage (Voc) were measured and from that Fill factor (F.F.) and photoconversion efficiency (η) are investigated. The results obtained shows that the value of efficiency and fill factor of solar cell varies with the illumination intensities.

scholarly journals Analytical Study of the Electrical Output Characteristics of c-Si Solar Cells by Cut and Shading Phenomena

Energies ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 3397 ◽  
Author(s):  
Jong Lim ◽  
Woo Shin ◽  
Hyemi Hwang ◽  
Young-Chul Ju ◽  
Suk Ko ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Incident Light ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
Electrical Output

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.

scholarly journals Improvement of short circuit current of mono crystalline silicon solar cells

2013 ◽  
Vol 16 (1) ◽  
pp. 48-56
Author(s):  
Vu Ngoc Hoang ◽  
Linh Ngoc Tran ◽  
Lan Truong ◽  
Khoa Thanh Nhat Phan ◽  
Chien Mau Dang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Indium Tin Oxide ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Front Surface ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Crystalline Silicon Solar Cell ◽  
Antireflection Coatings

In this report we present series of experiments during which the short circuit current of mono crystalline silicon solar cell was improved step by step so as a consequence the efficiency was increased. At first, the front contact of solar cell was optimized to reduce the shadow loss and the series resistance. Then surface treatments were prepared by TMAH solution to reduce the total light reflectance and to improve the light trapping effect. Finally, antireflection coatings were deposited to passivate the front surface either by silicon nitride thin layer or to increase the collection probability by indium tin oxide layer, and to reduce the reflectance of light. As a result, solar cells of about 13% have been obtained, with the average open circuit voltage Voc about 527mV, with the fill factor about 68% and the short circuit current about 7.92 mA/cm2 under the irradiation density of 21 mW/cm2.

scholarly journals Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Hyomin Park ◽  
Sung Ju Tark ◽  
Chan Seok Kim ◽  
Sungeun Park ◽  
Young Do Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Solar Simulator ◽  
Heterojunction Solar Cells ◽  
Crystalline Silicon Solar Cells

To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

Shape-Controllable Surface Texturization for Crystalline Silicon Solar Cells

2008 ◽  
Vol 1101 ◽  
Author(s):  
Jong-San Im ◽  
Jin-Wan Jeon ◽  
Koeng Su Lim
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Inductively Coupled Plasma ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Crystalline Silicon Solar Cells ◽  
Inductively Coupled ◽  
Polymer Dispersed Liquid Crystal ◽  
Polymer Dispersed

AbstractThis paper describes a new method to make surface textures for photovoltaic application. Using this method, we can make textures having various shapes. The first step is to make photo-resist (PR) molds using the polymer dispersed liquid crystal (PDLC) film. The second step is to transfer the PR molds to silicon by inductively coupled plasma etching process. The final step is a solar cell fabrication process. The structure of the solar cell is simple Al Grid/c-Si/Al back contact. The solar cells show the increase of the short circuit current (Jsc) comparing to the planar cells. By this texturing method, we can get solar cells having various textures which we want to make.

Influence of ITO layer application on electrical parameters of silicon solar cells with screen printed front electrode

2016 ◽  
Vol 33 (3) ◽  
pp. 172-175 ◽  
Author(s):  
Kazimierz Drabczyk ◽  
Jaroslaw Domaradzki ◽  
Grazyna Kulesza-Matlak ◽  
Marek Lipinski ◽  
Danuta Kaczmarek
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Electrical Performance ◽  
Silicon Solar Cells ◽  
Content Type ◽  
Crystalline Silicon Solar Cells ◽  
Screen Printed

Purpose The purpose of this paper was investigation and comparison of electrical and optical properties of crystalline silicon solar cells with ITO or TiO2 coating. The ITO, similar to TiO2, is very well transparent in the visible part of optical radiation; however, its low resistivity (lower that 10-3 Ohm/cm) makes it possible to use simultaneously as a transparent electrode for collection of photo-generated electrical charge carriers. This might also invoke increasing the distance between screen-printed metal fingers at the front of the solar cell that would increase of the cell’s active area. Performed optical investigation showed that applied ITO thin film fulfill standard requirements according to antireflection properties when it was deposited on the surface of silicon solar cell. Design/methodology/approach Two sets of samples were prepared for comparison. In the first one, the ITO thin film was deposited directly on the crystalline silicon substrate with highly doped emitter region. In the second case, the TCO film was deposited on the same type of silicon substrate but with additional ultrathin SiO2 passivation. The fingers lines of 80 μm width were then screen-printed on the ITO layer with two different spaces between fingers for each set. The influence of application of the ITO electrode and the type of metal electrodes patterns on the electrical performance of the prepared solar cells was investigated through optical and electrical measurements. Findings The electrical parameters such as short-circuit current (Jsc), open circuit voltage (Voc), fill factor (FF) and conversion efficiency were determined on a basis of I-V characteristics. Short-circuit current density (Jsc) was equal to 32 mA/cm2 for a solar cell with a typical antireflection layer and 31.5 mA/cm2 for the cell with ITO layer, respectively. Additionally, electroluminescence of prepared cells was measured and analysed. Originality/value The influence of the properties of ITO electrode on the electrical performance of crystalline silicon solar cells was investigated through complex optical, electrical and electroluminescence measurements.

scholarly journals Degradation effects of the output electrical characteristics of Si solar cells as a result of ionizing radiation under low light conditions

2015 ◽  
Vol 30 (3) ◽  
pp. 210-213 ◽  
Author(s):  
Nebojsa Stojanovic ◽  
Biljana Simic ◽  
Koviljka Stankovic ◽  
Djordje Lazarevic
Keyword(s):  
Solar Cells ◽  
Gamma Radiation ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Low Light ◽  
Crystalline Silicon Solar Cells ◽  
Current Maximum ◽  
Power Point

This paper presents results of radiation resistance of different types of commercially available single- and poly-crystalline silicon solar cells. Sample cells were subjected to gamma radiation from gamma radiation source 60Co. Characteristic parameters of solar cells were extracted from obtained I-V curves: open circuit voltage, short circuit current, maximum power point voltage and current, efficiency, fill factor, and series resistance. Obtained results show the level of parameters' degradation with purpose of increasing solar cells applications in radiation environments.

scholarly journals Performance Dependence of (I-V) and (C-V) for Solar Cells on Environmental Conditions

2018 ◽  
Vol 14 (1) ◽  
pp. 5331-5351
Author(s):  
A. M. Abd El-Maksood
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Dynamic Characteristics ◽  
Environmental Conditions ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Open Circuit ◽  
Charge Carrier Concentration ◽  
Crystalline Silicon Solar Cell ◽  
Cell Parameters

The present paper is a trial to shed further light on the dependence performance of mono-crystalline silicon solar cell (photovoltaic cell) on the environmental conditions. In this concern, the static (I-V) and dynamic (C-V) characteristics measurement were studied in details under the effect of illumination type, intensity and wavelength, as well temperature on the physical and electrical parameters of solar cell. The dependence of cell parameters- extracted from (I-V) characteristic curves- open-circuit voltage (Voc), short-circuit current (Isc), fill-factor (FF), conversion efficiency (η) as well the series -and shunt-resistances (Rs and Rsh), on the intensity has been investigated for a wide illumination intensity range 1.0 - 70 mW/cm2. It was observed that, for illumination levels higher than 10 klux, the values of Voc, Rsh, FF and efficiency were shown to be saturated. Isc was shown to be increased linearly, while Rs decreased exponentially as a function of illumination level. On the other hand, considering the dynamic characteristics (C-V), a detailed study was carried out for solar cells biased on both the forward - and reverse modes at frequency range of 20 kHz - 140 kHz and different illumination - levels. From which, the barrier potential (Vbi) and doping (charge carrier) concentration (Na) were determined. Besides, the influence of temperature within the range from 30 up to 110 oC on both the static and dynamic characteristics was tested. From which, it is clear that Voc, maximum powers (Pmax), FF, η of the sample were shown to be temperature decreasing functions. Moreover, Isc has a feeble increasing temperature coefficient. Finally, the solar cell capacitance (C) and dissipation factor (D) rise with rising temperature in both bias voltage conditions, while, impedance (Z), quality factor (Q), and phase angle (φ) reduce with rising temperature.

IMPROVING n+pp+ SINGLE CRYSTALLINE SILICON SOLAR CELLS BY LONG HIGH TEMPERATURE Al ANNEALING

2001 ◽  
Vol 15 (17n19) ◽  
pp. 601-604 ◽  
Author(s):  
Guillermo Santana ◽  
Arturo Morales-Acevedo
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Solar Grade Silicon ◽  
Minority Carrier Diffusion Length ◽  
Crystalline Silicon Solar Cells ◽  
High Annealing ◽  
Metallic Impurities

In this work, we show that solar cells made on solar grade silicon can be improved by annealing them at high temperatures (800° C) after the aluminum at the back is evaporated. This improvement is larger for longer annealing times. Both the short circuit current (Isc) and the open circuit voltage (Voc) increase due to an increase of the base minority carrier diffusion length and a reduction of dark current, respectively. This effect may be due to "gettering" of metallic impurities and precipitates at the bulk and junction regions of the cells. For this high annealing temperature we observed that the increase of Jsc tends to saturate after 60 minutes, while Voc continues increasing for annealing times above 150 minutes.

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