The Effect of Spin-Orbit Coupling on the Electronic Structures and Half-Metallicity of Heusler Compounds: V2ReZ (Z=Al, Ga, ln)

2013 ◽  
Vol 683 ◽  
pp. 211-217
Author(s):  
Hong Ying Jia ◽  
Xue Fang Dai ◽  
Li Ying Wang ◽  
Fang Wang ◽  
Lei Chen ◽  
...  
Keyword(s):  
Electronic Structures ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
High Symmetry ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Half Metallicity ◽  
Electron Effective Mass ◽  
Half Metallic ◽  
Singlet States

We have studied the influence of spin-orbit coupling (SOC) on the electronic structures and half-metallicity for the V2ReZ (Z=Al, Ga, In) compounds. It was found that the SOC has a slight influence on the whole configuration of the electronic structure and the degenerated states were split into several singlet states at the high-symmetry points. The egand t1ustates near the Fermi level are not sensitive to the SOC. The t2gstates composed of the side of half-metallic gap are sensitive to the SOC. The dispersivity of t2gstates was strongly reduced, which lead to an increase of the valence electron effective mass and the width of half-metallic gap. The SOC can slightly increase the spin splitting of Re and V(B) atoms. The Z atom has an influence on the intensity of SOC to act on half-metallic gap.

scholarly journals Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor

2021 ◽  
Vol 7 (5) ◽  
pp. eabe2892
Author(s):  
Dmitry Shcherbakov ◽  
Petr Stepanov ◽  
Shahriar Memaran ◽  
Yaxian Wang ◽  
Yan Xin ◽  
...  
Keyword(s):  
Electric Field ◽  
High Mobility ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Quantum Oscillations ◽  
Out Of Plane ◽  
Order Of Magnitude ◽  
Spin Degeneracy

Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic, and topological phenomena and applications. In bulk materials, SOC strength is a constant. Here, we demonstrate SOC and intrinsic spin splitting in atomically thin InSe, which can be modified over a broad range. From quantum oscillations, we establish that the SOC parameter α is thickness dependent; it can be continuously modulated by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Unexpectedly, α could be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.

scholarly journals Absence of the Rashba Splitting of Au(111) Surface Bands

2018 ◽  
Vol 2018 ◽  
pp. 1-5
Author(s):  
I. N. Yakovkin
Keyword(s):  
Electronic Structure ◽  
Dft Calculations ◽  
Surface States ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Inversion Symmetry ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Relativistic Approximation ◽  
Photoemission Experiment

The electronic structure of Au(111) films is studied by means of relativistic DFT calculations. It is found that the twinning of the surface bands, observed in photoemission experiment, does not necessarily correspond to the spin-splitting of the surface states caused by the break of the inversion symmetry at the surface. The twinning of the bands of clean Au(111) films can be obtained within nonrelativistic or scalar-relativistic approximation, so that it is not a result of spin-orbit coupling. However, the spin-orbit coupling does not lead to the spin-splitting of the surface bands. This result is explained by Kramers’ degeneracy, which means that the existence of a surface itself does not destroy the inversion symmetry of the system. The inversion symmetry of the Au(111) film can be broken, for example, by means of adsorption, and a hydrogen monolayer deposited on one face of the film indeed leads to the appearance of the spin-splitting of the bands.

Spin-Orbit Coupling and Zero-Field Electron Spin Splitting in AlGaN/AlN/GaN Heterostructures with a Polarization Induced Two-Dimensional Electron Gas

2006 ◽  
Vol 955 ◽  
Author(s):  
Ç. Kurdak ◽  
N. Biyikli ◽  
H. Cheng ◽  
U. Ozgur ◽  
H. Morkoç ◽  
...  
Keyword(s):  
Electron Spin ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Zero Field ◽  
Material System ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Weak Antilocalization ◽  
High Carrier ◽  
Dimensional Electron Gas

ABSTRACTWe studied spin-orbit coupling in wurtzite AlxGa1−xN/AlN/GaN heterostructures with different Al concentrations using weak antilocalization measurements at 1.6 K. Using the persistent photoconductivity effect we change the carrier density in controllable manner. We find that the electron spin splitting energies does not scale linearly with the Fermi wavevector at high carrier densities. From this deviation, for the first time, we are able to extract the cubic spin-orbit parameter for this material system.

Sign in / Sign up

Export Citation Format

Share Document