Theory of Direct-Transition Optical Gain in a Novel n+ Doping Tensile-Strained Ge/GeSiSn-on-Si Quantum well Laser
2013 ◽
Vol 746
◽
pp. 197-202
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Keyword(s):
The band structure and optical gain of a novel n+ doping tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. The doping effect in Ge quantum well and the effect of the carrier leakage into L valley on the optical gain will also be considered. The E-k dispersion curves and optical gain spectra will be obtained and discussed.
Keyword(s):
2008 ◽
Vol 5
(6)
◽
pp. 2126-2128
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2013 ◽
Vol 377
(7)
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pp. 582-586
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Keyword(s):
2008 ◽
Vol 40
(5-6)
◽
pp. 295-299
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Keyword(s):
1990 ◽
Vol 159
(1)
◽
pp. 117-124
◽
2017 ◽
Vol 17
(6)
◽
pp. 1451-1474
Keyword(s):