The Effect of Tensile Strain on AlGaAs/GaAsP Interdiffused Quantum Well Laser

MRS Proceedings ◽

10.1557/proc-484-413 ◽

1997 ◽

Vol 484 ◽

Author(s):

K. S. Chan ◽

Michael C. Y. Chan

Keyword(s):

Band Structure ◽

Quantum Well ◽

Valence Band ◽

Tensile Strain ◽

Optical Gain ◽

Valence Band Structure ◽

Quantum Well Laser ◽

Tensile Strains

AbstractIn this paper, we study the interdiffusion of tensile strained GaAsyPi.y /A10 33Ga0 67As single QW structures with a well width of 60Å. Different P concentrations in the as-grown well are chosen to obtain different tensile strains in the QW. Interdiffusion induces changes in the tensile strains and confinement potentials, which consequently change the valence band structure and the optical gain.

Download Full-text

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.31.95 ◽

2007 ◽

Vol 31 ◽

pp. 95-97

Author(s):

B. Dong ◽

W.J. Fan ◽

Y.X. Dang

Keyword(s):

Band Structure ◽

Quantum Well ◽

Optical Gain ◽

Band Structures ◽

Quantum Well Laser ◽

Suitable Combination ◽

Gain Spectra ◽

Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

Download Full-text

Valence band structure, edge states, and interband absorption in quantum-well wires in high magnetic fields

Physical Review B ◽

10.1103/physrevb.52.14118 ◽

1995 ◽

Vol 52 (19) ◽

pp. 14118-14125 ◽

Cited By ~ 14

Author(s):

G. Goldoni ◽

A. Fasolino

Keyword(s):

Magnetic Fields ◽

Band Structure ◽

Quantum Well ◽

Valence Band ◽

High Magnetic Fields ◽

Interband Absorption ◽

Edge States ◽

Valence Band Structure ◽

Quantum Well Wires

Download Full-text

The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2009.05.019 ◽

2009 ◽

Vol 41 (9) ◽

pp. 1656-1660 ◽

Cited By ~ 8

Author(s):

Shudong Wu ◽

Zhi Huang ◽

Yuan Liu ◽

Qiufeng Huang ◽

Wang Guo ◽

...

Keyword(s):

Band Structure ◽

Quantum Wells ◽

Valence Band ◽

Optical Gain ◽

Valence Band Structure

Download Full-text

Valence Band Structure and Optical Gain in CdxZn1-xS/ZnS Quantum Wells

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.4517 ◽

2002 ◽

Vol 41 (Part 1, No. 7A) ◽

pp. 4517-4518

Author(s):

Chikara Onodera ◽

Tadayoshi Shoji ◽

Yukio Hiratate ◽

Tsunemasa Taguchi

Keyword(s):

Band Structure ◽

Quantum Wells ◽

Valence Band ◽

Optical Gain ◽

Valence Band Structure

Download Full-text

Valence-band structure and optical absorption inp-type GaAs–Al0.3Ga0.7As multi-quantum-well infrared photodetectors under an electric field

Superlattices and Microstructures ◽

10.1006/spmi.1996.0222 ◽

1998 ◽

Vol 23 (5) ◽

pp. 1037-1046 ◽

Cited By ~ 1

Author(s):

R. Melliti ◽

P. Tronc ◽

E. Mao ◽

A. Majerfeld ◽

J. Depeyrot

Keyword(s):

Optical Absorption ◽

Band Structure ◽

Electric Field ◽

Quantum Well ◽

Valence Band ◽

Infrared Photodetectors ◽

Valence Band Structure ◽

Quantum Well Infrared Photodetectors ◽

Multi Quantum Well

Download Full-text

FINITE ELEMENT ANALYSIS OF VALENCE BAND STRUCTURE OF SQUARE QUANTUM WELL UNDER THE ELECTRIC FIELD

Surface Review and Letters ◽

10.1142/s0218625x09013177 ◽

2009 ◽

Vol 16 (05) ◽

pp. 689-696

Author(s):

M. GUNES ◽

E. KASAPOGLU ◽

H. SARI ◽

K. AKGUNGOR ◽

I. SÖKMEN

Keyword(s):

Finite Element Method ◽

Finite Element ◽

Band Structure ◽

Electric Field ◽

Quantum Well ◽

Valence Band ◽

Spin Orbit ◽

Element Analysis ◽

Valence Band Structure ◽

Theory Formula

Valence band structure with spin–orbit (SO) coupling of GaAs/Ga 1-x Al x As square quantum well (SQW) under the electric field by a calculation procedure based on a finite element method (FEM) is investigated using the multiband effective mass theory ([Formula: see text] method). The validity of the method is confirmed with the results of D. Ahn, S. L. Chuang and Y. C. Chang (J. Appl. Phys.64 (1998) 4056), who calculated valence band structure, using axial approximation for Luttinger–Kohn Hamiltonian and finite difference method. Our results demonstrated that SO coupling and electric field have significant effects on the valence band structure.

Download Full-text

Theory of Direct-Transition Optical Gain in a Novel n+ Doping Tensile-Strained Ge/GeSiSn-on-Si Quantum well Laser

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.746.197 ◽

2013 ◽

Vol 746 ◽

pp. 197-202 ◽

Cited By ~ 2

Author(s):

W.J. Fan

Keyword(s):

Band Structure ◽

Quantum Well ◽

Optical Gain ◽

Dispersion Curves ◽

Doping Effect ◽

Direct Transition ◽

Quantum Well Laser ◽

Gain Spectra

The band structure and optical gain of a novel n+ doping tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. The doping effect in Ge quantum well and the effect of the carrier leakage into L valley on the optical gain will also be considered. The E-k dispersion curves and optical gain spectra will be obtained and discussed.

Download Full-text