Disorder Effects on Tunneling Junctions

2006 ◽  
Vol 52 ◽  
pp. 116-120 ◽  
Author(s):  
Victor Da Costa ◽  
M. Romeo
Keyword(s):  
Metal Oxide ◽  
Tunnel Junctions ◽  
Statistical Properties ◽  
Statistical Distributions ◽  
Tunnel Current ◽  
Disorder Effects ◽  
Direct Experiment ◽  
Tunneling Junctions

This paper illustrates statistical properties of tunnel currents flowing through metalinsulator- metal tunnel junctions. A direct experiment performed on a metal-oxide junction shows that the tunnel current follows broad statistical distributions extending over more than 4 orders of magnitude. A simple lognormal law is proposed to explain the properties of currents flowing through tunnel junctions.

Role of Metal-Oxide Interface in Determining the Spin Polarization of Magnetic Tunnel Junctions

Science ◽  
1999 ◽  
Vol 286 (5439) ◽  
pp. 507-509 ◽  
Author(s):  
Jose Maria De Teresa ◽  
Agnès Barthélémy ◽  
Albert Fert ◽  
Jean Pierre Contour ◽  
François Montaigne ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Metal Oxide ◽  
Spin Polarization ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Ferromagnetic Transition ◽  
Oxide Interface ◽  
Oxide Interfaces ◽  
Structure Of Metal

The role of the metal-oxide interface in determining the spin polarization of electrons tunneling from or into ferromagnetic transition metals in magnetic tunnel junctions is reported. The spin polarization of cobalt in tunnel junctions with an alumina barrier is positive, but it is negative when the barrier is strontium titanate or cerium lanthanite. The results are ascribed to bonding effects at the transition metal–barrier interface. The influence of the electronic structure of metal-oxide interfaces on the spin polarization raises interesting fundamental problems and opens new ways to optimize the magnetoresistance of tunnel junctions.

Negative magnetoresistance in metal/oxide/InMnAs tunnel junctions

2006 ◽  
Vol 100 (5) ◽  
pp. 053912 ◽  
Author(s):  
S. J. May ◽  
P. J. Phillips ◽  
B. W. Wessels
Keyword(s):  
Metal Oxide ◽  
Tunnel Junctions ◽  
Negative Magnetoresistance

Nanometric cartography of tunnel current in metal–oxide junctions

1998 ◽  
Vol 83 (11) ◽  
pp. 6703-6705 ◽  
Author(s):  
V. Da Costa ◽  
F. Bardou ◽  
C. Béal ◽  
Y. Henry ◽  
J. P. Bucher ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Tunnel Current

Non-Equilibrium Green’s Function Modeling of the Transport Characteristics of Magnetic Tunnel Junctions Containing Anderson Impurities

SPIN ◽  
2020 ◽  
Vol 10 (01) ◽  
pp. 2050006
Author(s):  
Parvathy Harikumar ◽  
S. Mathi Jaya
Keyword(s):  
Green’S Function ◽  
Green's Function ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Many Body ◽  
Applied Bias ◽  
Tunnel Current ◽  
Spin Polarized ◽  
Barrier Region ◽  
Non Equilibrium Green’S Function

A nonequilibrium Green’s function (NEGF) formulation to study the transport characteristics of magnetic tunnel junctions (MTJs) that contains impurities at the barrier region and many-body interaction at the electrode region is presented. The formulation makes use of the already developed NEGF method for MTJs without any impurities and the impurity Green’s function is obtained using Haldane’s approach that explicitly takes into account the on-site Coulomb interaction ([Formula: see text]) of the impurity. The formulation is used to obtain the spin-dependent tunnel current of model MTJs as a function of the applied bias for different values of [Formula: see text] corresponding to both the parallel and antiparallel configuration of the end electrodes of the MTJ. The tunnel currents are used to obtain the tunnel magnetoresistance (TMR) of the MTJ and we observed from our study that the TMR is strongly influenced by the impurities. The TMR is found to be reduced compared to that of the MTJ without impurities and the bias dependence of the TMR is found to be strongly influenced by [Formula: see text]. Our studies revealed that the MTJ can exhibit almost completely spin polarized current at certain values of [Formula: see text].

Spin Transport in Spin Filtering Magnetic Tunneling Junctions

2007 ◽  
Vol 7 (11) ◽  
pp. 4143-4145 ◽  
Author(s):  
Yun Li ◽  
Eok Kyun Lee
Keyword(s):  
Spin Transport ◽  
Tunnel Junctions ◽  
Recursive Algorithm ◽  
Real Space ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling ◽  
Spin Filtering

Taking into account spin-orbit coupling and s–d interaction, we investigate spin transport properties of the magnetic tunneling junctions with spin filtering barrier using Landauer-Büttiker formalism implemented with the recursive algorithm to calculate the real-space Green function. We predict completely different bias dependence of negative tunnel magnetoresistance (TMR) between the systems composed of nonmagnetic electrode (NM)/ferromagnetic barrier (FB)/ferromagnet (FM) and NM/FB/FM/NM spin filtering tunnel junctions (SFTJs). Analyses of the results provide us possible ways of designing the systems which modulate the TMR in the negative magnetoresistance regime.

Potential barrier modification and interface states formation in metal-oxide-metal tunnel junctions

2009 ◽  
Vol 80 (12) ◽  
Author(s):  
Hyuntae Jung ◽  
Yongmin Kim ◽  
Kyooho Jung ◽  
Hyunsik Im ◽  
Yu. A. Pashkin ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Potential Barrier ◽  
Tunnel Junctions ◽  
Interface States

scholarly journals Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Gem Shoute ◽  
Amir Afshar ◽  
Triratna Muneshwar ◽  
Kenneth Cadien ◽  
Douglas Barlage
Keyword(s):  
Metal Oxide ◽  
Inversion Layer ◽  
Wide Bandgap ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Tunnel Current
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