Structural and Electrical Properties of (Bi,La)4Ti3O12 Thin Films with a Bi2O3 Top-Layer Prepared by a Chemical Solution Deposition Method

2003 ◽  
Vol 248 ◽  
pp. 45-48
Author(s):  
Dinghua Bao ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Chemical Solution Deposition ◽  
Deposition Method ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Structural And Electrical Properties

scholarly journals Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

2014 ◽  
Vol 1633 ◽  
pp. 25-33 ◽  
Author(s):  
D. S. L. Pontes ◽  
F. M Pontes ◽  
Marcelo A. Pereira-da-Silva ◽  
O. M. Berengue ◽  
A. J. Chiquito ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Single Crystal ◽  
Chemical Solution Deposition ◽  
Deposition Method ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
X Ray ◽  
Chemical Solution Deposition Method

ABSTRACTLaNiO3 thin films were deposited on SrLaAlO4 (100) and SrLaAlO4 (001) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700°C in tube oven. Structural, morphological, and electrical properties of the LaNiO3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (100) and (001) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces.

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