Dielectric and Ferroelectric Properties of Er2O3-Doped Bi4Ti3O12 Thin Films
Keyword(s):
Er2O3-doped bismuth titanate (Bi4-xErxTi3O12, BET) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Er-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that Er doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BET film with x=0.75 were 21 μC/cm2 and 80 kV/cm, respectively.
2013 ◽
Vol 833
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pp. 33-36
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2008 ◽
Vol 368-372
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pp. 82-84
Keyword(s):
2007 ◽
Vol 336-338
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pp. 152-154