Electrical Characterization and Microstructures of Y2O3-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 591 ◽  
pp. 208-211
Author(s):  
Min Chen ◽  
J. Liu ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature ◽  
Curie Temperature Tc

Y2O3-doped bismuth titanate (Bi4-xYxTi3O12: BYT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Y-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675 °C to lower temperature and a improvement in dielectric property. The experimental results indicated that Y doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BYT film with x=0.75 were 28 μC/cm2 and 65 kV/cm, respectively.

Electrical Characterization and Microstructures of Tb-Doped Bi4Ti3O12 Thin Films

2008 ◽  
Vol 368-372 ◽  
pp. 82-84
Author(s):  
Y.H. Sun ◽  
Min Chen ◽  
W.K. An ◽  
A.H. Cai ◽  
J. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature ◽  
Curie Temperature Tc

Tb-doped bismuth titanate (BixTbyTi3O12: BTT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well-developed rod-like grains with random orientation. Tb doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature. The experimental results indicated that Tb doping into BIT result in a remarkable improvement in dielectric property.

Electrical Characterization and Microstructures of Bi4-xGdxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 257-260
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature ◽  
Curie Temperature Tc

Gd2O3-doped bismuth titanate (Bi4-xGdxTi3O12: BGT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Gd-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675 °C to lower temperature and a improvement in dielectric property. The experimental results indicated that Gd doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BGT film with x=0.75 were 28 μC/cm2 and 65 kV/cm, respectively.

Electrical Characterization and Microstructures of Ce-Doped Bi4Ti3O12 Thin Films

2011 ◽  
Vol 492 ◽  
pp. 222-225
Author(s):  
J. Liu ◽  
M. Chen ◽  
X.A. Mei ◽  
Y.H. Sun ◽  
Chong Qing Huang
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature

Tb-doped bismuth titanate (Bi4-xCexTi3O12: BCT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Ce-doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that Ce doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BCT film with x = 0.75 were 23 μC/cm2 and 80 kV/cm, respectively.

Electrical Characterization and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2011 ◽  
Vol 412 ◽  
pp. 318-321
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
R.F. Liu ◽  
Y.H. Sun ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
La Doping ◽  
Si Substrates ◽  
Lower Temperature ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. La-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that La doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BLT film with x=0.75 were 20 μC/cm2 and 82kV/cm, respectively.

Ferroelectric Properties and Microstructures of Bi4-x LuxTi3O12 Thin Films

2013 ◽  
Vol 833 ◽  
pp. 33-36 ◽  
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature ◽  
Lu Doping

Lu2O3-doped bismuth titanate (Bi4-xLuxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Lu-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675 °C to lower temperature and a improvement in dielectric property. The experimental results indicated that Lu doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BLT film with x=0.75 were 28 μC/cm2 and 65 kV/cm, respectively.

Dielectric and Ferroelectric Properties of Er2O3-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 118-121
Author(s):  
X.B. Liu ◽  
X.A. Mei ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Er Doping ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature

Er2O3-doped bismuth titanate (Bi4-xErxTi3O12, BET) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Er-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that Er doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BET film with x=0.75 were 21 μC/cm2 and 80 kV/cm, respectively.

Electrical Characterization and Microstructures of Bi3.25Er0.75Ti3O12 and Bi2.9Er0.75Ti2.97V0.03O12 Thin Films

2012 ◽  
Vol 624 ◽  
pp. 178-181
Author(s):  
C.Q. Huang ◽  
J.G. Liu ◽  
X.A. Mei ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Er Doping ◽  
Si Substrates ◽  
Remarkable Improvement ◽  
Layered Perovskite Structure

Bi3.25Er0.75Ti3O12(BET) and Bi3.25Er0.75Ti2.97V0.03O12(BETV) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Er doping into Bi4Ti3O12 (BIT) also result in a remarkable improvement in ferroelectric property. The remanent polarization (Pr) and coercive field (Ec) of the BET film were 17 μC/cm2 and 80 kV/cm, respectively. Furthermore, V substitution improves the Er value of the BETV films up to 28 μC/cm2, which is much larger than that of the BET film.

Electrical Characteristics and Microstructures of Nd2O3-Doped Bi4Ti3O12 Thin Films

2007 ◽  
Vol 336-338 ◽  
pp. 152-154
Author(s):  
K.L. Su ◽  
Y.H. Sun ◽  
Min Chen ◽  
Z.M. Wan ◽  
Z.H. Hou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Random Orientation ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Curie Temperature Tc

Nd-doped bismuth titanate and random oriented Bi4-xNdxTi3O12 (BNT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The remanent polarization (Pr) and coercive field (Ec) of the BNT film with x = 0.5 were above 19 μC/cm2 and 50 KV/cm, respectively. Nd doping into BIT caused a shift of the Curie temperature (TC) of the BIT from 675°C to 660, 520, 410 and 256oC for the films with x = 0.25, 0.5, 0.75 and 1.0, respectively. The experimental results indicated that Nd doping into BIT result in a remarkable improvement in ferroelectric and dielectric properties.

Electrical Characterization and Microstructures of Bi4-xYxTi3O12 Ceramics

2013 ◽  
Vol 591 ◽  
pp. 204-207
Author(s):  
X.A. Mei ◽  
M. Chen ◽  
C.Q. Huang ◽  
R.F. Liu
Keyword(s):  
Dielectric Property ◽  
Bismuth Titanate ◽  
Electrical Characterization ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Remarkable Improvement ◽  
Layered Perovskite Structure ◽  
Lower Temperature ◽  
Curie Temperature Tc

Y-doped bismuth titanate (Bi4-xYxTi3O12: BYT) and pure Bi4Ti3O12 (BIT) ceramics with random orientation were fabricated by a conventional electroceramic technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. Y-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675 °C to lower temperature and a improvement in dielectric property. The experimental results indicated that Y doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BYT ceramic with x=0.75 were 20 μC/cm2 and 85 kV/cm, respectively.

Electrical Characterization and Microstructures of Bi3.3Tb0.6Ti3O12 and Bi3.3Tb0.6Ti2.97V0.03O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 126-129
Author(s):  
Rui Fang Liu ◽  
M.B. Sun ◽  
W.P. Ding ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Remarkable Improvement ◽  
Layered Perovskite Structure

Bi3.3Tb0.6Ti3O12(BTT), Bi3.3Tb0.6Ti2.97V0.03O12(BTTV), and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Tb doping into BIT also result in a remarkable improvement in ferroelectric property. The remanent polarization (Pr) and coercive field (Ec) of the BTT film were 25 μC/cm2 and 85 kV/cm, respectively. Furthermore, V substitution improves the Pr value of the BTVT film up to 35 μC/cm2, which is much larger than that of the BTT film.

Sign in / Sign up

Export Citation Format

Share Document