Electrical Characteristics and Microstructures of Nd2O3-Doped Bi4Ti3O12 Thin Films

2007 ◽  
Vol 336-338 ◽  
pp. 152-154
Author(s):  
K.L. Su ◽  
Y.H. Sun ◽  
Min Chen ◽  
Z.M. Wan ◽  
Z.H. Hou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Random Orientation ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Curie Temperature Tc

Nd-doped bismuth titanate and random oriented Bi4-xNdxTi3O12 (BNT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The remanent polarization (Pr) and coercive field (Ec) of the BNT film with x = 0.5 were above 19 μC/cm2 and 50 KV/cm, respectively. Nd doping into BIT caused a shift of the Curie temperature (TC) of the BIT from 675°C to 660, 520, 410 and 256oC for the films with x = 0.25, 0.5, 0.75 and 1.0, respectively. The experimental results indicated that Nd doping into BIT result in a remarkable improvement in ferroelectric and dielectric properties.

Electrical Characteristics and Microstructures of Bi2.9Pr0.9Ti3O12 and Bi2.9Pr0.92Ti2.97V0.03O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 122-125
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Random Orientation ◽  
Si Substrates ◽  
Remarkable Improvement ◽  
Layered Perovskite Structure

Bi2.9Pr0.9Ti3O12(BPT) and Bi2.9Pr0.9Ti2.97V0.03O12(BPTV) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Pr doping into Bi4Ti3O12 (BIT) result in a remarkable improvement in ferroelectric property. The remanent polarization (Pr) and coercive field (Ec) of the BPT film were 28 μC/cm2 and 80 kV/cm, respectively. Furthermore, V substitution improves the Pr value of the BTVT film up to 43 μC/cm2, which is much larger than that of the BPT film.

Dielectric Characterization and Microstructures of Pr6O11-Doped Bi4Ti3O12 Thin Films

2007 ◽  
Vol 336-338 ◽  
pp. 155-157 ◽  
Author(s):  
Min Chen ◽  
Y.H. Sun ◽  
K.L. Su ◽  
J. Liu ◽  
S. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Raman Analysis ◽  
Dielectric Characterization ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Curie Temperature Tc

Pr6O11-doped bismuth titanate and random oriented BixPryTi3O12 ( y = 0.3, 0.6, 0.9, 1.2) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Pr doping into BIT caused a shift of the Curie temperature (TC) of the BIT from 675°C to 578 , 517, 398 , and 315oC for the films with y = 0.3, 0.6, 0.9, and 1.2, respectively. The experimental results indicated that Pr doping into BIT result in a remarkable improvement in dielectric properties. Raman analysis shows that Pr3+ and Pr4+ ions substitution only appears in A-sit.

Electrical Characterization and Microstructures of Y2O3-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 591 ◽  
pp. 208-211
Author(s):  
Min Chen ◽  
J. Liu ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature ◽  
Curie Temperature Tc

Y2O3-doped bismuth titanate (Bi4-xYxTi3O12: BYT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Y-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675 °C to lower temperature and a improvement in dielectric property. The experimental results indicated that Y doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BYT film with x=0.75 were 28 μC/cm2 and 65 kV/cm, respectively.

Electrical Characterization and Microstructures of Ce-Doped Bi4Ti3O12 Thin Films

2011 ◽  
Vol 492 ◽  
pp. 222-225
Author(s):  
J. Liu ◽  
M. Chen ◽  
X.A. Mei ◽  
Y.H. Sun ◽  
Chong Qing Huang
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature

Tb-doped bismuth titanate (Bi4-xCexTi3O12: BCT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Ce-doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that Ce doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BCT film with x = 0.75 were 23 μC/cm2 and 80 kV/cm, respectively.

Electrical Characterization and Microstructures of Tb-Doped Bi4Ti3O12 Thin Films

2008 ◽  
Vol 368-372 ◽  
pp. 82-84
Author(s):  
Y.H. Sun ◽  
Min Chen ◽  
W.K. An ◽  
A.H. Cai ◽  
J. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature ◽  
Curie Temperature Tc

Tb-doped bismuth titanate (BixTbyTi3O12: BTT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well-developed rod-like grains with random orientation. Tb doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature. The experimental results indicated that Tb doping into BIT result in a remarkable improvement in dielectric property.

Electrical Characterization and Microstructures of Bi3.25Er0.75Ti3O12 and Bi2.9Er0.75Ti2.97V0.03O12 Thin Films

2012 ◽  
Vol 624 ◽  
pp. 178-181
Author(s):  
C.Q. Huang ◽  
J.G. Liu ◽  
X.A. Mei ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Er Doping ◽  
Si Substrates ◽  
Remarkable Improvement ◽  
Layered Perovskite Structure

Bi3.25Er0.75Ti3O12(BET) and Bi3.25Er0.75Ti2.97V0.03O12(BETV) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Er doping into Bi4Ti3O12 (BIT) also result in a remarkable improvement in ferroelectric property. The remanent polarization (Pr) and coercive field (Ec) of the BET film were 17 μC/cm2 and 80 kV/cm, respectively. Furthermore, V substitution improves the Er value of the BETV films up to 28 μC/cm2, which is much larger than that of the BET film.

Electrical Characterization and Microstructures of Bi4-xGdxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 257-260
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature ◽  
Curie Temperature Tc

Gd2O3-doped bismuth titanate (Bi4-xGdxTi3O12: BGT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Gd-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675 °C to lower temperature and a improvement in dielectric property. The experimental results indicated that Gd doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BGT film with x=0.75 were 28 μC/cm2 and 65 kV/cm, respectively.

Preparation and Ferroelectric Properties of Bi4-xTmxTi3O12 Thin Films

2013 ◽  
Vol 833 ◽  
pp. 41-44
Author(s):  
Bei Li ◽  
X.H. Yuan ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Remarkable Improvement ◽  
Layered Perovskite Structure

Tm2O3-doped bismuth titanate (Bi4-xTmxTi3O12, BTT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Tm doping into BIT results in remarkable improvement in ferroelectric properties. The Pr and the Ec values of the BTT film with x=0.75 were 28 μC/cm2 and 80 kV/cm, respectively.

Electrical Characteristics and Microstructures of Dy2O3-Doped Bi4Ti3O12 Thin Films

2011 ◽  
Vol 492 ◽  
pp. 206-209
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
A.H. Cai ◽  
J. Liu ◽  
Chong Qing Huang
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Random Orientation ◽  
Si Substrates ◽  
Xrd Studies

Dy2O3-doped bismuth titanate (Bi4-xDyxTi3O12: BDT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BDT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization (Pr) and coercive field (Ec) of the BDT Film with x = 0.8 were 20 μC/cm2 and 60 KV/cm, respectively. After 3 × 1010 switching cycles, 20% degradation of Pr is observed in the film.

Electrical Characterization and Microstructures of Bi3.3Tb0.6Ti3O12 and Bi3.3Tb0.6Ti2.97V0.03O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 126-129
Author(s):  
Rui Fang Liu ◽  
M.B. Sun ◽  
W.P. Ding ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Remarkable Improvement ◽  
Layered Perovskite Structure

Bi3.3Tb0.6Ti3O12(BTT), Bi3.3Tb0.6Ti2.97V0.03O12(BTTV), and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Tb doping into BIT also result in a remarkable improvement in ferroelectric property. The remanent polarization (Pr) and coercive field (Ec) of the BTT film were 25 μC/cm2 and 85 kV/cm, respectively. Furthermore, V substitution improves the Pr value of the BTVT film up to 35 μC/cm2, which is much larger than that of the BTT film.

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