Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing

2002 ◽  
Vol 389-393 ◽  
pp. 795-798 ◽  
Author(s):  
Junji Senzaki ◽  
Shinsuke Harada ◽  
Ryouji Kosugi ◽  
Seiji Suzuki ◽  
Kenji Fukuda ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing

Study of GaN thin layers subjected to high-temperature rapid thermal annealing

1998 ◽  
Vol 32 (10) ◽  
pp. 1048-1053 ◽  
Author(s):  
N. I. Katsavets ◽  
G. M. Laws ◽  
I. Harrison ◽  
E. C. Larkins ◽  
T. M. Benson ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Layers ◽  
Temperature Rapid Thermal Annealing

Morphology and photoluminescence improvements from high‐temperature rapid thermal annealing of GaN

1996 ◽  
Vol 68 (2) ◽  
pp. 200-202 ◽  
Author(s):  
J. C. Zolper ◽  
M. Hagerott Crawford ◽  
A. J. Howard ◽  
J. Ramer ◽  
S. D. Hersee
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing

Multi-Cycle High Temperature Rapid Thermal Annealing for Dislocation Elimination in 4H-SiC Epitaxy

2014 ◽  
Vol 64 (7) ◽  
pp. 35-39
Author(s):  
N. A. Mahadik ◽  
M. J. Tadjer ◽  
R. E. Stahlbush ◽  
E. A. Imhoff ◽  
B. Feigelson
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing
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