Electrical properties of Ga-implanted Si p/sup +/-n shallow junctions fabricated by low-temperature rapid thermal annealing
2002 ◽
Vol 389-393
◽
pp. 795-798
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2012 ◽
Vol 50
(8)
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pp. 557-562
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2015 ◽
Vol 66
(6)
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pp. 1001-1008
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Titanium–silicon and silicon dioxide reactions controlled by low temperature rapid thermal annealing
1986 ◽
Vol 4
(3)
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pp. 993-997
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1996 ◽
Vol 104-105
◽
pp. 335-341
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