A Porphyrin Pentamer as a Bright Emitter for NIR OLEDs

The luminescence and electroluminescence of an ethyne-linked zinc(II) porphyrin pentamer have been investigated, by testing blends in two different conjugated polymer matrices, at a range of concentrations. The best results were obtained for blends with the conjugated polymer PIDT-2TPD, at a porphyrin loading of 1 wt%. This host matrix was selected because the excellent overlap between its emission spectrum and the absorption spectrum of the porphyrin oligomer leads to efficient energy transfer. Thin films of this blend exhibit intense fluorescence in the near-infrared (NIR), with a peak emission wavelength of 886 nm and a photoluminescent quantum yield (PLQY) of 27% in the solid state. Light-emitting diodes (LEDs) fabricated with this blend as the emissive layer achieve average external quantum efficiencies (EQE) of 2.0% with peak emission at 830 nm and a turn-on voltage of 1.6 V. This performance is remarkable for a singlet NIR-emitter; 93% of the photons are emitted in the NIR (λ > 700 nm), indicating that conjugated porphyrin oligomers are promising emitters for non-toxic NIR OLEDs.

Effects of Variation in Al Content on the Emission of Eu Doped CaAlSiN3 Red Phosphor Synthesized by Combustion Synthesis Method for White LEDs

Effects of Al content on the formation and the photoluminescence properties of CaAlSiN3:Eu2+ phosphor (CASIN) were investigated by a combustion synthesis method. XRD (X-ray diffraction), combined with PL (photoluminescence), TEM-EDS (transmission electron microscope equipped with an energy-dispersive X-ray spectroscope), and SAED (selected area electron diffraction) measurements, show that the bar-like CASIN gives a stronger emission than the plate-like and agglomerated fine particles. The emission intensity increases as the Al content increased from Al = 0.2 to Al = 0.8, which resulted from the extent of formation of CASIN increases. Then, the emission intensity decreases as the Al content is increased from Al = 0.8 to Al = 1.5, which resulted from the transformation of morphology of CASIN and a large amount formation of AlN. In addition, the extent of formation of CASIN increases with increasing Al from Al = 0.2 to Al = 1.2 and begins to decrease as Al is further increased to 1.5, and thus the peak emission wavelength increases from 647 nm to 658 nm as the Al molar ratio is increased from 0.2 to 1.2 and begins to decrease when further increasing the Al molar ratio to 1.5, which resulted from the large amount of AlN formed.

Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes

We fabricated indium gallium nitride (InGaN) red light-emitting diodes (LEDs) with a peak emission wavelength of 649 nm and investigated their electroluminescence (EL) properties. An additional separated peak in the EL spectrum of the red LEDs at 20 mA was observed at 465 nm. This additional peak also exhibits a blue-shift with increasing currents as does the main emission peak. Using high-resolution microscopy, we observed many point-like emission spots in the EL emission images at the currents below 1 mA. However, these emission spots cannot be identified at currents above 5 mA because the red emission from quantum wells (QWs) is much stronger than that emitted by these spots. Finally, we demonstrate that these emission spots are related to the defects generated in red QWs. The measured In content was lower at the vicinity of the defects, which was regarded as the reason for separated short-wavelength emission in red InGaN LEDs.

UV light-emitting diode (UV-LED) at 265 nm as a potential light source for disinfecting human platelet concentrates

The risk of sepsis through bacterial transmission is one of the most serious problems in platelet transfusion. In processing platelet concentrates (PCs), several methods have been put into practice to minimize the risk of bacterial transmission, such as stringent monitoring by cultivation assays and inactivation treatment by photoirradiation with or without chemical agents. As another potential option, we applied a light-emitting diode (LED) with a peak emission wavelength of 265 nm, which has been shown to be effective for water, to disinfect PCs. In a bench-scale UV-LED exposure setup, a 10-min irradiation, corresponding to an average fluence of 9.2 mJ/cm2, resulted in >2.0 log, 1.0 log, and 0.6 log inactivation (mean, n = 6) of Escherichia coli, Staphylococcus aureus, and Bacillus cereus, respectively, in non-diluted plasma PCs. After a 30-min exposure, platelet counts decreased slightly (18 ± 7%: mean ± SD, n = 7); however, platelet surface expressions of CD42b, CD61, CD62P, and PAC-1 binding did not change significantly (P>0.005), and agonist-induced aggregation and adhesion/aggregation under flow conditions were well maintained. Our findings indicated that the 265 nm UV-LED has high potential as a novel disinfection method to ensure the microbial safety of platelet transfusion.

Perfecting and extending the near-infrared biological window

In vivo fluorescence imaging in the second near-infrared window (NIR-II) has been considered as a promising technique for visualizing the mammals. However, the definition of the NIR-II region and the mechanism accounting for the excellent performance still need to be perfected. Herein, we simulated bioimaging in the NIR spectral range (to 2340 nm), confirmed the positive contribution of moderate light absorption by water in intravital imaging and perfected the NIR-II window as 900-1880 nm, where the 1400-1500 nm was defined as NIR-IIx region and the 1700-1880 nm was defined as NIR-IIc region, respectively. Moreover, the 2080-2340 nm was newly proposed as the third near-infrared (NIR-III) window, which was believed to provide the best imaging quality. The wide-field fluorescence microscopy in brain, in addition, was performed around NIR-IIx region with excellent optical sectioning strength and the largest imaging depth of in vivo NIR-II fluorescence microscopy to date. We also proposed 1400 nm long-pass detection in off-peak NIR-II imaging whose profits exceeded those of NIR-IIb imaging, using bright fluorophores with short peak emission wavelength.

Characterization of higher harmonic modes in Fabry–Pérot microcavity organic light emitting diodes

Encasing an OLED between two planar metallic electrodes creates a Fabry–Pérot microcavity, resulting in significant narrowing of the emission bandwidth. The emission from such microcavity OLEDs depends on the overlap of the resonant cavity modes and the comparatively broadband electroluminescence spectrum of the organic molecular emitter. Varying the thickness of the microcavity changes the mode structure, resulting in a controlled change in the peak emission wavelength. Employing a silicon wafer substrate with high thermal conductivity to dissipate excess heat in thicker cavities allows cavity thicknesses from 100 to 350 nm to be driven at high current densities. Three resonant modes, the fundamental and first two higher harmonics, are characterized, resulting in tunable emission peaks throughout the visible range with increasingly narrow bandwidth in the higher modes. Angle resolved electroluminescence spectroscopy reveals the outcoupling of the TE and TM waveguide modes which blue-shift with respect to the normal emission at higher angles. Simultaneous stimulation of two resonant modes can produce dual peaks in the violet and red, resulting in purple emission. These microcavity-based OLEDs employ a single green molecular emitter and can be tuned to span the entire color gamut, including both the monochromatic visible range and the purple line.

Band-Engineered Structural Design of High-Performance Deep-Ultraviolet Light-Emitting Diodes

In this study, systematic structural design was investigated numerically to probe into the cross-relating influences of n-AlGaN layer, quantum barrier (QB), and electron-blocking layer (EBL) on the output performance of AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) with various Al compositions in quantum wells. Simulation results show that high-Al-composition QB and high-Al-composition EBL utilized separately are beneficial for the enhancement of carrier confinement, while the wall-plug efficiency (WPE) degrades dramatically if both high-Al-composition QB and EBL are existing in a DUV LED structure simultaneously. DUV LEDs may be of great optical performance with appropriate structural design by fine-tuning the material parameters in n-AlGaN layer, QB, and EBL. The design curves provided in this paper can be very useful for the researchers in developing the DUV LEDs with a peak emission wavelength ranging from 255 nm to 285 nm.

A data-driven approach to predicting band gap, excitation, and emission energies for Eu2+-activated phosphors

An integrated ML model platform is developed to predict the peak emission wavelength (PEW), excitation band edge wavelength (EBEW), and band gap (Eg) from structural, elemental, chemical, and physical descriptors of Eu2+-activated phosphors.

Development of a 3” LaBr3 SiPM-Based Detection Module for High Resolution Gamma Ray Spectroscopy and Imaging

Gamma radiation detection finds many applications in different fields, including astrophysics, nuclear physics and medical diagnostics. Nowadays large Lanthanum Bromide crystals coupled to Photomultiplier Tubes (PMTs) represent the state of the art for gamma detection modules, in particular for spectroscopic measurements. Nevertheless, there is an interest in substituting photomultiplier tubes with solid state photodetectors like Silicon Photomultipliers (SiPMs), owing to the latter’s significant advantages. These include insensitivity to magnetic fields, low bias voltage, compactness, fast response and mechanical robustness. The aim of this thesis work, which was carried out within the context of the GAMMA project supported by IstitutoNazionale di FisicaNucleare (INFN), is the design, development and experimental characterization of a -ray spectrometer based on large Lanthanum Bromide scintillator crystals coupled with Silicon Photomultipliers. This detector specifications are compliant with nuclear physics experiments with energies ranging from 100 keV to 20 MeV, characterized by state-of-the-art energy resolution and imaging capability, in a compact, modular and robust structure. In order to perform the readout of large scintillator crystals, a matrix of 144 Silicon Photomultipliers was designed using NUV-HD SiPMs from Fondazione Bruno Kessler (FBK). These were chosen due to their high Photon Detection Efficiency in correspondence with the peak emission wavelength of the crystal, the high cell density and low Dark Count Rate.